WMK036N12HGS. Аналоги и основные параметры

Наименование производителя: WMK036N12HGS

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 250 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 120 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 188 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 50.6 ns

Cossⓘ - Выходная емкость: 733 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0036 Ohm

Тип корпуса: TO220

Аналог (замена) для WMK036N12HGS

- подборⓘ MOSFET транзистора по параметрам

 

WMK036N12HGS даташит

 ..1. Size:644K  way-on
 wmk036n12hgs.pdf pdf_icon

WMK036N12HGS

WMK036N12HGS 120V N-Channel Enhancement Mode Power MOSFET Description WMK036N12HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 120V, I = 188A

 9.1. Size:634K  way-on
 wmk030n06lg4.pdf pdf_icon

WMK036N12HGS

WMK030N06LG4 60V N-Channel Enhancement Mode Power MOSFET Description WMK030N06LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D Features G TO-220 V = 60V, I = 18

 9.2. Size:669K  way-on
 wml03n80m3 wmn03n80m3 wmm03n80m3 wmo03n80m3 wmp03n80m3 wmk03n80m3.pdf pdf_icon

WMK036N12HGS

WML03N80M3, W 80M3, WM M3 WMN03N8 MM03N80M WMO0 80M3, WM M3 03N80M3, WMP03N8 MK03N80M 800 Junction ET 0V 3.0 Super J n Power MOSFE Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge perf

 9.3. Size:619K  way-on
 wmk037n10hgs.pdf pdf_icon

WMK036N12HGS

WMK037N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMK037N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S Features D G TO-220 V = 100V, I = 170A

ПОКАЗАТЬ ЕЩЁ

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