WMK040N08HGS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMK040N08HGS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 227.3 W
Voltaje máximo drenador - fuente |Vds|: 80 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 180 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 78.5 nC
Tiempo de subida (tr): 13 nS
Conductancia de drenaje-sustrato (Cd): 1064 pF
Resistencia entre drenaje y fuente RDS(on): 0.0048 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET WMK040N08HGS
WMK040N08HGS Datasheet (PDF)
wmk040n08hgs.pdf
WMK040N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMK040N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 80V, I = 180A D
wmk048nv6hg4.pdf
WMK048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionWMK048NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 65V, I = 11
wmk043n10lgs.pdf
WMK043N10LGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK043N10LGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I = 145A
wmk043n10hgs.pdf
WMK043N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK043N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I = 145A
wmk048nv6lg4.pdf
WMK048NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionWMK048NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 65V, I = 11
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