Справочник MOSFET. WMK040N08HGS

 

WMK040N08HGS Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMK040N08HGS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 227.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 180 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 1064 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0048 Ohm
   Тип корпуса: TO220
     - подбор MOSFET транзистора по параметрам

 

WMK040N08HGS Datasheet (PDF)

 ..1. Size:620K  way-on
 wmk040n08hgs.pdf pdf_icon

WMK040N08HGS

WMK040N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMK040N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 80V, I = 180A D

 9.1. Size:623K  way-on
 wmk048nv6hg4.pdf pdf_icon

WMK040N08HGS

WMK048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionWMK048NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 65V, I = 11

 9.2. Size:991K  way-on
 wmk043n10lgs.pdf pdf_icon

WMK040N08HGS

WMK043N10LGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK043N10LGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I = 145A

 9.3. Size:619K  way-on
 wmk043n10hgs.pdf pdf_icon

WMK040N08HGS

WMK043N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK043N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I = 145A

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History: FQP1N50 | NCEP065N10GU

 

 
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