WMK040N08HGS - описание и поиск аналогов

 

WMK040N08HGS. Аналоги и основные параметры

Наименование производителя: WMK040N08HGS

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 227.3 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 80 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 180 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 13 ns

Cossⓘ - Выходная емкость: 1064 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0048 Ohm

Тип корпуса: TO220

Аналог (замена) для WMK040N08HGS

- подборⓘ MOSFET транзистора по параметрам

 

WMK040N08HGS даташит

 ..1. Size:620K  way-on
 wmk040n08hgs.pdf pdf_icon

WMK040N08HGS

WMK040N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description WMK040N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 80V, I = 180A D

 9.1. Size:623K  way-on
 wmk048nv6hg4.pdf pdf_icon

WMK040N08HGS

WMK048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET Description WMK048NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 65V, I = 11

 9.2. Size:991K  way-on
 wmk043n10lgs.pdf pdf_icon

WMK040N08HGS

WMK043N10LGS 100V N-Channel Enhancement Mode Power MOSFET Description WMK043N10LGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 100V, I = 145A

 9.3. Size:619K  way-on
 wmk043n10hgs.pdf pdf_icon

WMK040N08HGS

WMK043N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMK043N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 100V, I = 145A

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WMK023N08HGS , WMK028N08HGD , WMK028N10HG2 , WMK028N10HGS , WMK030N06HG4 , WMK030N06LG4 , WMK036N12HGS , WMK037N10HGS , IRF1010E , WMK043N10HGS , WMK043N10LGS , WMK048NV6HG4 , WMK048NV6LG4 , WMK053N10HGS , WMK053NV8HGS , WMK05N70MM , WMO05N70MM .

History: IRF9240SMD | WMK10N80M3 | 3N80L-TA3-T | STD1NK60 | VS3622DP | SM1F04NSFP | AOB600A70FL

 

 

 

 

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