WMK040N08HGS MOSFET Datasheet: N-Ch, 80V, 180A. Full specification with pinout and replacement list

WMK040N08HGS Specs and Replacement

Type Designator: WMK040N08HGS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 227.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 1064 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm

Package: TO220

WMK040N08HGS substitution

- MOSFET ⓘ Cross-Reference Search

WMK040N08HGS datasheet

..1. Size:620K way-on
wmk040n08hgs.pdf pdf_icon

WMK040N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description WMK040N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 80V, I = 180A D... See More ⇒

9.1. Size:623K way-on
wmk048nv6hg4.pdf pdf_icon

WMK048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET Description WMK048NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 65V, I = 11... See More ⇒

9.2. Size:991K way-on
wmk043n10lgs.pdf pdf_icon

WMK043N10LGS 100V N-Channel Enhancement Mode Power MOSFET Description WMK043N10LGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 100V, I = 145A ... See More ⇒

9.3. Size:619K way-on
wmk043n10hgs.pdf pdf_icon

WMK043N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMK043N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 100V, I = 145A ... See More ⇒