WMK043N10LGS Todos los transistores

 

WMK043N10LGS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMK043N10LGS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 208 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 145 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 37.8 nS

Cossⓘ - Capacitancia de salida: 722 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm

Encapsulados: TO220

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WMK043N10LGS datasheet

 ..1. Size:991K  way-on
 wmk043n10lgs.pdf pdf_icon

WMK043N10LGS

WMK043N10LGS 100V N-Channel Enhancement Mode Power MOSFET Description WMK043N10LGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 100V, I = 145A

 5.1. Size:619K  way-on
 wmk043n10hgs.pdf pdf_icon

WMK043N10LGS

WMK043N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMK043N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 100V, I = 145A

 9.1. Size:623K  way-on
 wmk048nv6hg4.pdf pdf_icon

WMK043N10LGS

WMK048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET Description WMK048NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 65V, I = 11

 9.2. Size:620K  way-on
 wmk040n08hgs.pdf pdf_icon

WMK043N10LGS

WMK040N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description WMK040N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 80V, I = 180A D

MOSTRAR MÁS

Otros transistores... WMK028N10HG2 , WMK028N10HGS , WMK030N06HG4 , WMK030N06LG4 , WMK036N12HGS , WMK037N10HGS , WMK040N08HGS , WMK043N10HGS , AON6380 , WMK048NV6HG4 , WMK048NV6LG4 , WMK053N10HGS , WMK053NV8HGS , WMK05N70MM , WMO05N70MM , WMN05N70MM , WMM05N70MM .

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History: WMJ80N60C4

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