All MOSFET. WMK043N10LGS Datasheet

 

WMK043N10LGS Datasheet and Replacement


   Type Designator: WMK043N10LGS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 145 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 37.8 nS
   Cossⓘ - Output Capacitance: 722 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO220
 

 WMK043N10LGS substitution

   - MOSFET ⓘ Cross-Reference Search

 

WMK043N10LGS Datasheet (PDF)

 ..1. Size:991K  way-on
 wmk043n10lgs.pdf pdf_icon

WMK043N10LGS

WMK043N10LGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK043N10LGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I = 145A

 5.1. Size:619K  way-on
 wmk043n10hgs.pdf pdf_icon

WMK043N10LGS

WMK043N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK043N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I = 145A

 9.1. Size:623K  way-on
 wmk048nv6hg4.pdf pdf_icon

WMK043N10LGS

WMK048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionWMK048NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 65V, I = 11

 9.2. Size:620K  way-on
 wmk040n08hgs.pdf pdf_icon

WMK043N10LGS

WMK040N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMK040N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 80V, I = 180A D

SHOW MORE

Datasheet: WMK028N10HG2 , WMK028N10HGS , WMK030N06HG4 , WMK030N06LG4 , WMK036N12HGS , WMK037N10HGS , WMK040N08HGS , WMK043N10HGS , IRLZ44N , WMK048NV6HG4 , WMK048NV6LG4 , WMK053N10HGS , WMK053NV8HGS , WMK05N70MM , WMO05N70MM , WMN05N70MM , WMM05N70MM .

History: IRFPG20 | SISS27DN | IPP90N04S4-02 | FDB86566-F085 | SSF6646 | IRLZ24L | NTR4170NT1G

Keywords - WMK043N10LGS MOSFET datasheet

 WMK043N10LGS cross reference
 WMK043N10LGS equivalent finder
 WMK043N10LGS lookup
 WMK043N10LGS substitution
 WMK043N10LGS replacement

 

 
Back to Top

 


 
.