Справочник MOSFET. WMK043N10LGS

 

WMK043N10LGS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WMK043N10LGS
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 208 W
   Предельно допустимое напряжение сток-исток |Uds|: 100 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2.5 V
   Максимально допустимый постоянный ток стока |Id|: 145 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 111.2 nC
   Время нарастания (tr): 37.8 ns
   Выходная емкость (Cd): 722 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0045 Ohm
   Тип корпуса: TO220

 Аналог (замена) для WMK043N10LGS

 

 

WMK043N10LGS Datasheet (PDF)

 ..1. Size:991K  way-on
wmk043n10lgs.pdf

WMK043N10LGS
WMK043N10LGS

WMK043N10LGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK043N10LGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I = 145A

 5.1. Size:619K  way-on
wmk043n10hgs.pdf

WMK043N10LGS
WMK043N10LGS

WMK043N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK043N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I = 145A

 9.1. Size:623K  way-on
wmk048nv6hg4.pdf

WMK043N10LGS
WMK043N10LGS

WMK048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionWMK048NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 65V, I = 11

 9.2. Size:620K  way-on
wmk040n08hgs.pdf

WMK043N10LGS
WMK043N10LGS

WMK040N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMK040N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 80V, I = 180A D

 9.3. Size:623K  way-on
wmk048nv6lg4.pdf

WMK043N10LGS
WMK043N10LGS

WMK048NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionWMK048NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 65V, I = 11

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