WMK048NV6LG4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: WMK048NV6LG4
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 104.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 65 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 110 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 35 nC
   trⓘ - Tiempo de subida: 8.4 nS
   Cossⓘ - Capacitancia de salida: 675 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0052 Ohm
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de MOSFET WMK048NV6LG4

WMK048NV6LG4 Datasheet (PDF)

..1. Size:623K way-on
wmk048nv6lg4.pdf

WMK048NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionWMK048NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 65V, I = 11

5.1. Size:623K way-on
wmk048nv6hg4.pdf

WMK048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionWMK048NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 65V, I = 11

9.1. Size:991K way-on
wmk043n10lgs.pdf

WMK043N10LGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK043N10LGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I = 145A

9.2. Size:620K way-on
wmk040n08hgs.pdf

WMK040N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMK040N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 80V, I = 180A D

9.3. Size:619K way-on
wmk043n10hgs.pdf

WMK043N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK043N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I = 145A

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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