WMK048NV6LG4 MOSFET Datasheet: N-Ch, 65V, 110A. Full specification with pinout and replacement list

WMK048NV6LG4 Specs and Replacement

Type Designator: WMK048NV6LG4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.4 nS

Cossⓘ - Output Capacitance: 675 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm

Package: TO220

WMK048NV6LG4 substitution

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WMK048NV6LG4 datasheet

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wmk048nv6lg4.pdf pdf_icon

WMK048NV6LG4 65V N-Channel Enhancement Mode Power MOSFET Description WMK048NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 65V, I = 11... See More ⇒

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wmk048nv6hg4.pdf pdf_icon

WMK048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET Description WMK048NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 65V, I = 11... See More ⇒

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wmk043n10lgs.pdf pdf_icon

WMK043N10LGS 100V N-Channel Enhancement Mode Power MOSFET Description WMK043N10LGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 100V, I = 145A ... See More ⇒

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WMK040N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description WMK040N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 80V, I = 180A D... See More ⇒