WMK048NV6LG4. Аналоги и основные параметры

Наименование производителя: WMK048NV6LG4

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 104.2 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 65 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 110 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 8.4 ns

Cossⓘ - Выходная емкость: 675 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0052 Ohm

Тип корпуса: TO220

Аналог (замена) для WMK048NV6LG4

- подборⓘ MOSFET транзистора по параметрам

 

WMK048NV6LG4 даташит

 ..1. Size:623K  way-on
 wmk048nv6lg4.pdf pdf_icon

WMK048NV6LG4

WMK048NV6LG4 65V N-Channel Enhancement Mode Power MOSFET Description WMK048NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 65V, I = 11

 5.1. Size:623K  way-on
 wmk048nv6hg4.pdf pdf_icon

WMK048NV6LG4

WMK048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET Description WMK048NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 65V, I = 11

 9.1. Size:991K  way-on
 wmk043n10lgs.pdf pdf_icon

WMK048NV6LG4

WMK043N10LGS 100V N-Channel Enhancement Mode Power MOSFET Description WMK043N10LGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 100V, I = 145A

 9.2. Size:620K  way-on
 wmk040n08hgs.pdf pdf_icon

WMK048NV6LG4

WMK040N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description WMK040N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 80V, I = 180A D

ПОКАЗАТЬ ЕЩЁ

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