WMK099N10LGS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMK099N10LGS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 96 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 68 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 59 nC
Tiempo de subida (tr): 28.5 nS
Conductancia de drenaje-sustrato (Cd): 285 pF
Resistencia entre drenaje y fuente RDS(on): 0.0099 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET WMK099N10LGS
WMK099N10LGS Datasheet (PDF)
wmk099n10lgs.pdf
WMK099N10LGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK099N10LGS uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I =
wmk099n10lg2.pdf
WMK099N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK099N10LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SFeatures DGTO-220 V = 100V, I = 65
wmk099n10hgs.pdf
WMK099N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK099N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I = 68A
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