WMK099N10LGS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMK099N10LGS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 96 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 68 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 28.5 nS
Cossⓘ - Capacitancia de salida: 285 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0099 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de WMK099N10LGS MOSFET
- Selecciónⓘ de transistores por parámetros
WMK099N10LGS datasheet
wmk099n10lgs.pdf
WMK099N10LGS 100V N-Channel Enhancement Mode Power MOSFET Description WMK099N10LGS uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 100V, I =
wmk099n10lg2.pdf
WMK099N10LG2 100V N-Channel Enhancement Mode Power MOSFET Description WMK099N10LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S Features D G TO-220 V = 100V, I = 65
wmk099n10hgs.pdf
WMK099N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMK099N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 100V, I = 68A
Otros transistores... WMP05N70MM , WMK060N08HG2 , WMK060N10LGS , WMK071N15HG2 , WMK072N12HG2 , WMK072N12LG2 , WMK099N10HGS , WMK099N10LG2 , SI2302 , WMK100N07TS , WMK100N10TS , WMK110N20HG2 , WMK115N15HG4 , WMK119N12HG4 , WMK119N12LG4 , WMK120N04TS , WMK13N50D1B .
History: MDE1991RH | VS3640DB | ME2306A-G | AO8803 | 2SK2253-01M | SM4305PSKC | STF15N60M2-EP
History: MDE1991RH | VS3640DB | ME2306A-G | AO8803 | 2SK2253-01M | SM4305PSKC | STF15N60M2-EP
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: ASU70R600E | ASU65R850E | ASU65R550E | ASU65R350E | ASR65R120EFD | ASR65R046EFD | ASQ65R046EFD | ASM65R280E | ASM60R330E | ASE70R950E | ASD80R750E | ASD70R950E | ASD70R600E | ASD70R380E | ASD65R850E | ASD65R550E
Popular searches
tip32a | p75nf75 mosfet equivalent | irfpe50 | tip50 | transistor bc547 datasheet | bc109c | d331 transistor | irfbc40
