WMK099N10LGS Datasheet and Replacement
Type Designator: WMK099N10LGS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 68 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 28.5 nS
Cossⓘ - Output Capacitance: 285 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0099 Ohm
Package: TO220
WMK099N10LGS substitution
WMK099N10LGS Datasheet (PDF)
wmk099n10lgs.pdf

WMK099N10LGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK099N10LGS uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I =
wmk099n10lg2.pdf

WMK099N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK099N10LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SFeatures DGTO-220 V = 100V, I = 65
wmk099n10hgs.pdf

WMK099N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK099N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I = 68A
Datasheet: WMP05N70MM , WMK060N08HG2 , WMK060N10LGS , WMK071N15HG2 , WMK072N12HG2 , WMK072N12LG2 , WMK099N10HGS , WMK099N10LG2 , IRFZ46N , WMK100N07TS , WMK100N10TS , WMK110N20HG2 , WMK115N15HG4 , WMK119N12HG4 , WMK119N12LG4 , WMK120N04TS , WMK13N50D1B .
Keywords - WMK099N10LGS MOSFET datasheet
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History: 2301L | WFP5N80



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