WMK16N10T1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: WMK16N10T1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 44.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 20.6 nC
   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 55 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de MOSFET WMK16N10T1

WMK16N10T1 Datasheet (PDF)

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wmk16n10t1.pdf

WMK16N10T1 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK16N10T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features SDG V =100V, I = 15.8A DS DTO-220R

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wml16n65sr wmk16n65sr wmm16n65sr wmn16n65sr wmp16n65sr wmo16n65sr.pdf

WML16N65SR, W 65SR, WM SR WMK16N6 MM16N65S WMN16N65SR, WMP16N6 MO16N65S65SR, WM SR 650V 0.31 S unction P MOSFET0 Super Ju Power M TDescripptionWMOSTM SR is Wa new generation super ayons w junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G Tand low ga charge perfo

8.2. Size:664K way-on
wml16n70sr wmk16n70sr wmm16n70sr wmn16n70sr wmp16n70sr wmo16n70sr.pdf

WML16N70SR, W 70SR, WM SR WMK16N7 MM16N70S WMN16N70SR, WMP16N7 MO16N70S70SR, WM SR 700V 0.31 S unction P MOSFET0 Super Ju Power M TDescripptionWMOSTM SR is Wa new generation super ayons w junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G Tand low ga charge perfo

9.1. Size:589K way-on
wmk161n15t2.pdf

WMK161N15T2 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMK161N15T2 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 150V, I = 161A DS DSDGR

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