WMK16N10T1 MOSFET Datasheet: N-Ch, 100V, 15.8A. Full specification with pinout and replacement list

WMK16N10T1 Specs and Replacement

Type Designator: WMK16N10T1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO220

WMK16N10T1 substitution

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WMK16N10T1 datasheet

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WMK16N10T1 100V N-Channel Enhancement Mode Power MOSFET Description WMK16N10T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features S D G V =100V, I = 15.8A DS D TO-220 R ... See More ⇒

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