WMK175N10LG4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMK175N10LG4
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 73 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 46 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2.8 nS
Cossⓘ - Capacitancia de salida: 144 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0175 Ohm
Paquete / Cubierta: TO220
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WMK175N10LG4 Datasheet (PDF)
wmk175n10lg4.pdf

WMK175N10LG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK175N10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I =
wmk175n10hg4.pdf

WMK175N10HG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK175N10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I =
Otros transistores... WMK120N04TS , WMK13N50D1B , WML13N50D1B , WMK15N50D1B , WML15N50D1B , WMK161N15T2 , WMK16N10T1 , WMK175N10HG4 , NCEP15T14 , WMK180N03TS , WMK18N50D1B , WML18N50D1B , WMJ18N50D1B , WMK18P10TS , WMK190N03TS , WMK190N15HG4 , WMK220N20HG3 .
History: PT8822 | SSP90R1K5S | SL15N10A | IRF7331PBF-1 | 1N60E | NTR5198NL | WMN07N80M3
History: PT8822 | SSP90R1K5S | SL15N10A | IRF7331PBF-1 | 1N60E | NTR5198NL | WMN07N80M3



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