All MOSFET. WMK175N10LG4 Datasheet

 

WMK175N10LG4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMK175N10LG4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 73 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 46 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22.7 nC
   trⓘ - Rise Time: 2.8 nS
   Cossⓘ - Output Capacitance: 144 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0175 Ohm
   Package: TO220

 WMK175N10LG4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMK175N10LG4 Datasheet (PDF)

 ..1. Size:604K  way-on
wmk175n10lg4.pdf

WMK175N10LG4
WMK175N10LG4

WMK175N10LG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK175N10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I =

 5.1. Size:599K  way-on
wmk175n10hg4.pdf

WMK175N10LG4
WMK175N10LG4

WMK175N10HG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK175N10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I =

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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