WMK175N10LG4 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMK175N10LG4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 73 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 46 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Total Gate Charge (Qg): 22.7 nC
Rise Time (tr): 2.8 nS
Drain-Source Capacitance (Cd): 144 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0175 Ohm
Package: TO220
WMK175N10LG4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMK175N10LG4 Datasheet (PDF)
wmk175n10lg4.pdf
WMK175N10LG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK175N10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I =
wmk175n10hg4.pdf
WMK175N10HG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK175N10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I =
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
