WMK175N10LG4 MOSFET Datasheet: N-Ch, 100V, 46A. Full specification with pinout and replacement list

WMK175N10LG4 Specs and Replacement

Type Designator: WMK175N10LG4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 73 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 46 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.8 nS

Cossⓘ - Output Capacitance: 144 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0175 Ohm

Package: TO220

WMK175N10LG4 substitution

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WMK175N10LG4 datasheet

..1. Size:604K way-on
wmk175n10lg4.pdf pdf_icon

WMK175N10LG4 100V N-Channel Enhancement Mode Power MOSFET Description WMK175N10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 100V, I = ... See More ⇒

5.1. Size:599K way-on
wmk175n10hg4.pdf pdf_icon

WMK175N10HG4 100V N-Channel Enhancement Mode Power MOSFET Description WMK175N10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 100V, I = ... See More ⇒

Detailed specifications: WMK120N04TS, WMK13N50D1B, WML13N50D1B, WMK15N50D1B, WML15N50D1B, WMK161N15T2, WMK16N10T1, WMK175N10HG4, IRF1405, WMK180N03TS, WMK18N50D1B, WML18N50D1B, WMJ18N50D1B, WMK18P10TS, WMK190N03TS, WMK190N15HG4, WMK220N20HG3