WMK180N03TS Todos los transistores

 

WMK180N03TS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMK180N03TS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 181 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 180 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 28 nS

Cossⓘ - Capacitancia de salida: 401 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0036 Ohm

Encapsulados: TO220

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WMK180N03TS datasheet

 ..1. Size:594K  way-on
wmk180n03ts.pdf pdf_icon

WMK180N03TS

WMK180N03TS 30V N-Channel Enhancement Mode Power MOSFET Description WMK180N03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features S D G V = 30V, I = 180A DS D TO-220 R

 9.1. Size:708K  way-on
wml18n70em wmk18n70em wmm18n70em wmn18n70em wmp18n70em wmo18n70em.pdf pdf_icon

WMK180N03TS

WML18 WMK18N7 8N70EM, W 70EM, WMM18N70EM WMN18 WMP18N7 8N70EM, W 70EM, WMO18N70EM 700V Super Ju MOSFET V 0.24 S unction Power M T Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is

 9.2. Size:1263K  way-on
wmk18n50d1b wml18n50d1b wmj18n50d1b.pdf pdf_icon

WMK180N03TS

WMK18N50D1B WML18N50D1B WMJ18N50D1B 500V 18A 0.28 N-ch Power MOSFET Description TO-247 TO-220 TO-220F WMOSTM D1 is Wayon s 1st generation VDMOS TAB TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D S G D S G D S

 9.3. Size:594K  way-on
wmk18p10ts.pdf pdf_icon

WMK180N03TS

WMK18P10TS 100V P-Channel Enhancement Mode Power MOSFET Description WMK18P10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = -100V, I = -18A DS D S D G R

Otros transistores... WMK13N50D1B , WML13N50D1B , WMK15N50D1B , WML15N50D1B , WMK161N15T2 , WMK16N10T1 , WMK175N10HG4 , WMK175N10LG4 , 7N60 , WMK18N50D1B , WML18N50D1B , WMJ18N50D1B , WMK18P10TS , WMK190N03TS , WMK190N15HG4 , WMK220N20HG3 , WMK25N06TS .

 

 

 


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