WMK180N03TS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

WMK180N03TS Datasheet (PDF)

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WMK180N03TS 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMK180N03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features SDG V = 30V, I = 180A DS DTO-220R

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wml18n70em wmk18n70em wmm18n70em wmn18n70em wmp18n70em wmo18n70em.pdf pdf_icon

WML18 WMK18N78N70EM, W 70EM, WMM18N70EM WMN18 WMP18N78N70EM, W 70EM, WMO18N70EM 700V Super Ju MOSFETV 0.24 S unction Power M TDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is

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wmk18n50d1b wml18n50d1b wmj18n50d1b.pdf pdf_icon

WMK18N50D1B WML18N50D1B WMJ18N50D1B 500V 18A 0.28 N-ch Power MOSFET Description TO-247 TO-220 TO-220F WMOSTM D1 is Wayons 1st generation VDMOS TAB TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D S G D S G D S

9.3. Size:594K way-on
wmk18p10ts.pdf pdf_icon

WMK18P10TS 100V P-Channel Enhancement Mode Power MOSFET DescriptionWMK18P10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = -100V, I = -18A DS DSDGR