WMK180N03TS Todos los transistores

 

WMK180N03TS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMK180N03TS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 181 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 180 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tiempo de subida (tr): 28 nS
   Conductancia de drenaje-sustrato (Cd): 401 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0036 Ohm
   Paquete / Cubierta: TO220

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WMK180N03TS Datasheet (PDF)

 ..1. Size:594K  way-on
wmk180n03ts.pdf

WMK180N03TS
WMK180N03TS

WMK180N03TS 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMK180N03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features SDG V = 30V, I = 180A DS DTO-220R

 9.1. Size:708K  way-on
wml18n70em wmk18n70em wmm18n70em wmn18n70em wmp18n70em wmo18n70em.pdf

WMK180N03TS
WMK180N03TS

WML18 WMK18N78N70EM, W 70EM, WMM18N70EM WMN18 WMP18N78N70EM, W 70EM, WMO18N70EM 700V Super Ju MOSFETV 0.24 S unction Power M TDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is

 9.2. Size:1263K  way-on
wmk18n50d1b wml18n50d1b wmj18n50d1b.pdf

WMK180N03TS
WMK180N03TS

WMK18N50D1B WML18N50D1B WMJ18N50D1B 500V 18A 0.28 N-ch Power MOSFET Description TO-247 TO-220 TO-220F WMOSTM D1 is Wayons 1st generation VDMOS TAB TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D S G D S G D S

 9.3. Size:594K  way-on
wmk18p10ts.pdf

WMK180N03TS
WMK180N03TS

WMK18P10TS 100V P-Channel Enhancement Mode Power MOSFET DescriptionWMK18P10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = -100V, I = -18A DS DSDGR

 9.4. Size:683K  way-on
wml18n50c4 wmo18n50c4 wmk18n50c4 wmn18n50c4 wmm18n50c4 wmj18n50c4.pdf

WMK180N03TS
WMK180N03TS

WML18N50C4, WMO18N5 WM C4 W 50C4, MK18N50CWMN18N50C4, WMM18N50C4, WM C4 MJ18N50C 500V 0.25 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C

 9.5. Size:708K  way-on
wml18n65em wmk18n65em wmm18n65em wmn18n65em wmp18n65em wmo18n65em.pdf

WMK180N03TS
WMK180N03TS

WML18 WMK18N68N65EM, W 65EM, WMM18N65EM WMN18 WMP18N68N65EM, W 65EM, WMO18N65EM 650V Super Ju MOSFETV 0.24 S unction Power M TDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is

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