WMK180N03TS MOSFET Datasheet: N-Ch, 30V, 180A. Full specification with pinout and replacement list

WMK180N03TS Specs and Replacement

Type Designator: WMK180N03TS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 181 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 401 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm

Package: TO220

WMK180N03TS substitution

- MOSFET ⓘ Cross-Reference Search

WMK180N03TS datasheet

..1. Size:594K way-on
wmk180n03ts.pdf pdf_icon

WMK180N03TS 30V N-Channel Enhancement Mode Power MOSFET Description WMK180N03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features S D G V = 30V, I = 180A DS D TO-220 R ... See More ⇒

9.1. Size:708K way-on
wml18n70em wmk18n70em wmm18n70em wmn18n70em wmp18n70em wmo18n70em.pdf pdf_icon

WML18 WMK18N7 8N70EM, W 70EM, WMM18N70EM WMN18 WMP18N7 8N70EM, W 70EM, WMO18N70EM 700V Super Ju MOSFET V 0.24 S unction Power M T Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is ... See More ⇒

9.2. Size:1263K way-on
wmk18n50d1b wml18n50d1b wmj18n50d1b.pdf pdf_icon

WMK18N50D1B WML18N50D1B WMJ18N50D1B 500V 18A 0.28 N-ch Power MOSFET Description TO-247 TO-220 TO-220F WMOSTM D1 is Wayon s 1st generation VDMOS TAB TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D S G D S G D S ... See More ⇒

9.3. Size:594K way-on
wmk18p10ts.pdf pdf_icon

WMK18P10TS 100V P-Channel Enhancement Mode Power MOSFET Description WMK18P10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = -100V, I = -18A DS D S D G R ... See More ⇒