WMK180N03TS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: WMK180N03TS
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 181 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 180 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 32 nC
Время нарастания (tr): 28 ns
Выходная емкость (Cd): 401 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0036 Ohm
Тип корпуса: TO220
Аналог (замена) для WMK180N03TS
WMK180N03TS Datasheet (PDF)
wmk180n03ts.pdf
WMK180N03TS 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMK180N03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features SDG V = 30V, I = 180A DS DTO-220R
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