WMK18N50D1B Todos los transistores

 

WMK18N50D1B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMK18N50D1B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 208 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 250 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm
   Paquete / Cubierta: TO220
 

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WMK18N50D1B Datasheet (PDF)

 ..1. Size:1263K  way-on
 wmk18n50d1b wml18n50d1b wmj18n50d1b.pdf pdf_icon

WMK18N50D1B

WMK18N50D1B WML18N50D1B WMJ18N50D1B 500V 18A 0.28 N-ch Power MOSFET Description TO-247 TO-220 TO-220F WMOSTM D1 is Wayons 1st generation VDMOS TAB TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D S G D S G D S

 6.1. Size:683K  way-on
 wml18n50c4 wmo18n50c4 wmk18n50c4 wmn18n50c4 wmm18n50c4 wmj18n50c4.pdf pdf_icon

WMK18N50D1B

WML18N50C4, WMO18N5 WM C4 W 50C4, MK18N50CWMN18N50C4, WMM18N50C4, WM C4 MJ18N50C 500V 0.25 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C

 8.1. Size:708K  way-on
 wml18n70em wmk18n70em wmm18n70em wmn18n70em wmp18n70em wmo18n70em.pdf pdf_icon

WMK18N50D1B

WML18 WMK18N78N70EM, W 70EM, WMM18N70EM WMN18 WMP18N78N70EM, W 70EM, WMO18N70EM 700V Super Ju MOSFETV 0.24 S unction Power M TDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is

 8.2. Size:708K  way-on
 wml18n65em wmk18n65em wmm18n65em wmn18n65em wmp18n65em wmo18n65em.pdf pdf_icon

WMK18N50D1B

WML18 WMK18N68N65EM, W 65EM, WMM18N65EM WMN18 WMP18N68N65EM, W 65EM, WMO18N65EM 650V Super Ju MOSFETV 0.24 S unction Power M TDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is

MOSTRAR MÁS

Otros transistores... WML13N50D1B , WMK15N50D1B , WML15N50D1B , WMK161N15T2 , WMK16N10T1 , WMK175N10HG4 , WMK175N10LG4 , WMK180N03TS , RU7088R , WML18N50D1B , WMJ18N50D1B , WMK18P10TS , WMK190N03TS , WMK190N15HG4 , WMK220N20HG3 , WMK25N06TS , WMK25N10T1 .

History: AO4705 | SHD231006

 

 
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