WMK18N50D1B Specs and Replacement
Type Designator: WMK18N50D1B
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 250 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: TO220
WMK18N50D1B substitution
- MOSFET ⓘ Cross-Reference Search
WMK18N50D1B datasheet
wmk18n50d1b wml18n50d1b wmj18n50d1b.pdf
WMK18N50D1B WML18N50D1B WMJ18N50D1B 500V 18A 0.28 N-ch Power MOSFET Description TO-247 TO-220 TO-220F WMOSTM D1 is Wayon s 1st generation VDMOS TAB TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D S G D S G D S ... See More ⇒
wml18n50c4 wmo18n50c4 wmk18n50c4 wmn18n50c4 wmm18n50c4 wmj18n50c4.pdf
WML18N50C4, WMO18N5 WM C4 W 50C4, MK18N50C WMN18N50C4, WMM18N50C4, WM C4 MJ18N50C 500V 0.25 S T V Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low ga charge performanc WMOSTM C... See More ⇒
wml18n70em wmk18n70em wmm18n70em wmn18n70em wmp18n70em wmo18n70em.pdf
WML18 WMK18N7 8N70EM, W 70EM, WMM18N70EM WMN18 WMP18N7 8N70EM, W 70EM, WMO18N70EM 700V Super Ju MOSFET V 0.24 S unction Power M T Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is ... See More ⇒
wml18n65em wmk18n65em wmm18n65em wmn18n65em wmp18n65em wmo18n65em.pdf
WML18 WMK18N6 8N65EM, W 65EM, WMM18N65EM WMN18 WMP18N6 8N65EM, W 65EM, WMO18N65EM 650V Super Ju MOSFET V 0.24 S unction Power M T Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is ... See More ⇒
Detailed specifications: WML13N50D1B, WMK15N50D1B, WML15N50D1B, WMK161N15T2, WMK16N10T1, WMK175N10HG4, WMK175N10LG4, WMK180N03TS, IRFZ48N, WML18N50D1B, WMJ18N50D1B, WMK18P10TS, WMK190N03TS, WMK190N15HG4, WMK220N20HG3, WMK25N06TS, WMK25N10T1
Keywords - WMK18N50D1B MOSFET specs
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