WML7N65D1B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WML7N65D1B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 63 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 27.4 nS
Cossⓘ - Capacitancia de salida: 92 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.35 Ohm
Paquete / Cubierta: TO220F
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WML7N65D1B Datasheet (PDF)
wmk7n65d1b wmh7n65d1b wml7n65d1b wmo7n65d1b.pdf
WMK7N65D1B WMH7N65D1BWML7N65D1B WMO7N65D1B650V 7A 1.12 N-ch Power MOSFETDescriptionTO-220 TO-220FTABWMOSTM D1 is Wayons 1st generationVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerGGDDSSdensity and high efficiency. And it is veryTO-251-L3.5TO-252robust and RoHS compliant.TABTAB
wml7n80d1.pdf
WML7N80D1 800V 7A 1.4 N-ch Power MOSFET Description TO-220F WMOSTM D1 is Wayons 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D Features S Typ.R =1.4@V =10V DS(on) GS 100% avalanche tested
Otros transistores... WMM4N90D1B , WMK50N06TS , WMK6N90D1 , WML6N90D1 , WMM6N90D1 , WMK75N03T1 , WMK7N65D1B , WMH7N65D1B , 20N60 , WMO7N65D1B , WMK80N04T1 , WMK80N06TS , WMK80N08TS , WMK90N08TS , WMK9N50D1B , WML9N50D1B , WMO9N50D1B .
History: SLF70R380E7C | FDPF3860T | WML11N80M3 | WML13N50D1B | FDPF16N50UT | WML13N65EM | WMM28N50C4
History: SLF70R380E7C | FDPF3860T | WML11N80M3 | WML13N50D1B | FDPF16N50UT | WML13N65EM | WMM28N50C4
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