All MOSFET. WML7N65D1B Datasheet

 

WML7N65D1B Datasheet and Replacement


   Type Designator: WML7N65D1B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27.4 nS
   Cossⓘ - Output Capacitance: 92 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm
   Package: TO220F
 

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WML7N65D1B Datasheet (PDF)

 ..1. Size:1960K  way-on
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WML7N65D1B

WMK7N65D1B WMH7N65D1BWML7N65D1B WMO7N65D1B650V 7A 1.12 N-ch Power MOSFETDescriptionTO-220 TO-220FTABWMOSTM D1 is Wayons 1st generationVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerGGDDSSdensity and high efficiency. And it is veryTO-251-L3.5TO-252robust and RoHS compliant.TABTAB

 9.1. Size:1158K  way-on
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WML7N65D1B

WML7N80D1 800V 7A 1.4 N-ch Power MOSFET Description TO-220F WMOSTM D1 is Wayons 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D Features S Typ.R =1.4@V =10V DS(on) GS 100% avalanche tested

Datasheet: WMM4N90D1B , WMK50N06TS , WMK6N90D1 , WML6N90D1 , WMM6N90D1 , WMK75N03T1 , WMK7N65D1B , WMH7N65D1B , IRF840 , WMO7N65D1B , WMK80N04T1 , WMK80N06TS , WMK80N08TS , WMK90N08TS , WMK9N50D1B , WML9N50D1B , WMO9N50D1B .

History: WMK80N06TS | JMSH1010AG | FDG6301NF085 | JMSH1006PE | FDC638APZ | IXFR30N50Q | STH6N100FI

Keywords - WML7N65D1B MOSFET datasheet

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