FDPF12N50UT Todos los transistores

 

FDPF12N50UT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDPF12N50UT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 21 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
   Paquete / Cubierta: TO220F
 

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FDPF12N50UT Datasheet (PDF)

 ..1. Size:646K  fairchild semi
 fdp12n50u fdpf12n50ut.pdf pdf_icon

FDPF12N50UT

November 2007Ultra FRFETTMFDP12N50U / FDPF12N50UTtmN-Channel MOSFET, FRFET 500V, 10A, 0.8Features Description RDS(on) = 0.65 ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 21nC)DMOS technology. Low Crss ( Typ. 11pF)This advance

 ..2. Size:694K  onsemi
 fdpf12n50ut.pdf pdf_icon

FDPF12N50UT

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 5.1. Size:377K  fairchild semi
 fdp12n50nz fdpf12n50nz.pdf pdf_icon

FDPF12N50UT

October 2010UniFET-IITMFDP12N50NZ / FDPF12N50NZN-Channel MOSFET 500V, 11.5A, 0.52Features Description RDS(on) = 0.46 ( Typ. ) @ VGS = 10V, ID = 5.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 23nC )stripe, DMOS technology. Low Crss ( Typ. 14pF )This advanced tech

 5.2. Size:446K  fairchild semi
 fdp12n50 fdpf12n50.pdf pdf_icon

FDPF12N50UT

June 2007UniFETTMFDP12N50 / FDPF12N50tmN-Channel MOSFET 500V, 11.5A, 0.65Features Description RDS(on) = 0.55 (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 22nC) stripe, DMOS technology. Low Crss ( Typ. 11pF)This advanced technology has be

MOSTRAR MÁS

Otros transistores... FDPF10N50UT , FDPF10N60NZ , STM4472 , FDPF10N60ZUT , STG8209 , FDPF12N50FT , FDPF12N50NZ , FDPF12N50T , 60N06 , FDPF12N60NZ , STG8205 , FDPF13N50FT , FDPF14N30 , FDPF15N65 , FDPF16N50 , FDPF16N50T , FDPF16N50UT .

History: 2N7055 | 10N65K | APQ03SN80CH

 

 
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