All MOSFET. FDPF12N50UT Datasheet

 

FDPF12N50UT MOSFET. Datasheet pdf. Equivalent

Type Designator: FDPF12N50UT

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 42 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm

Package: TO220F

FDPF12N50UT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDPF12N50UT Datasheet (PDF)

1.1. fdpf12n50nzt.pdf Size:370K _upd-mosfet

FDPF12N50UT
FDPF12N50UT

October 2010 UniFET-IITM FDP12N50NZ / FDPF12N50NZ N-Channel MOSFET 500V, 11.5A, 0.52Ω Features Description • RDS(on) = 0.46Ω ( Typ. ) @ VGS = 10V, ID = 5.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 23nC ) stripe, DMOS technology. • Low Crss ( Typ. 14pF ) This advanced tech

1.2. fdp12n50 fdpf12n50.pdf Size:446K _fairchild_semi

FDPF12N50UT
FDPF12N50UT

June 2007 UniFETTM FDP12N50 / FDPF12N50 tm N-Channel MOSFET 500V, 11.5A, 0.65? Features Description RDS(on) = 0.55? (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 22nC) stripe, DMOS technology. Low Crss ( Typ. 11pF) This advanced technology has been especially

 1.3. fdp12n50nz fdpf12n50nz.pdf Size:377K _fairchild_semi

FDPF12N50UT
FDPF12N50UT

October 2010 UniFET-IITM FDP12N50NZ / FDPF12N50NZ N-Channel MOSFET 500V, 11.5A, 0.52? Features Description RDS(on) = 0.46? ( Typ. ) @ VGS = 10V, ID = 5.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 23nC ) stripe, DMOS technology. Low Crss ( Typ. 14pF ) This advanced technology has be

1.4. fdp12n50f fdpf12n50ft.pdf Size:695K _fairchild_semi

FDPF12N50UT
FDPF12N50UT

December 2007 UniFETTM FDP12N50F / FDPF12N50FT tm N-Channel MOSFET 500V, 11.5A, 0.7? Features Description RDS(on) = 0.59? ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 21nC) DMOS technology. Low Crss ( Typ. 11pF) This advance technology has been espe

 1.5. fdp12n50u fdpf12n50ut.pdf Size:646K _fairchild_semi

FDPF12N50UT
FDPF12N50UT

November 2007 Ultra FRFETTM FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8? Features Description RDS(on) = 0.65? ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 21nC) DMOS technology. Low Crss ( Typ. 11pF) This advance technology has

1.6. fdp12n50 fdpf12n50t.pdf Size:535K _fairchild_semi

FDPF12N50UT
FDPF12N50UT

May 2012 UniFETTM FDP12N50 / FDPF12N50T tm N-Channel MOSFET 500V, 11.5A, 0.65Ω Features Description • RDS(on) = 0.55Ω (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 22nC) stripe, DMOS technology. • Low Crss ( Typ. 11pF) This advanced technology has be

Datasheet: FDPF10N50UT , FDPF10N60NZ , STM4472 , FDPF10N60ZUT , STG8209 , FDPF12N50FT , FDPF12N50NZ , FDPF12N50T , APT50M38JLL , FDPF12N60NZ , STG8205 , FDPF13N50FT , FDPF14N30 , FDPF15N65 , FDPF16N50 , FDPF16N50T , FDPF16N50UT .

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