November 2007Ultra FRFETTMFDP12N50U / FDPF12N50UTtmN-Channel MOSFET, FRFET 500V, 10A, 0.8Features Description RDS(on) = 0.65 ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 21nC)DMOS technology. Low Crss ( Typ. 11pF)This advance

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

October 2010UniFET-IITMFDP12N50NZ / FDPF12N50NZN-Channel MOSFET 500V, 11.5A, 0.52Features Description RDS(on) = 0.46 ( Typ. ) @ VGS = 10V, ID = 5.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 23nC )stripe, DMOS technology. Low Crss ( Typ. 14pF )This advanced tech

June 2007UniFETTMFDP12N50 / FDPF12N50tmN-Channel MOSFET 500V, 11.5A, 0.65Features Description RDS(on) = 0.55 (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 22nC) stripe, DMOS technology. Low Crss ( Typ. 11pF)This advanced technology has be

December 2007UniFETTMFDP12N50F / FDPF12N50FTtmN-Channel MOSFET 500V, 11.5A, 0.7Features Description RDS(on) = 0.59 ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 21nC)DMOS technology. Low Crss ( Typ. 11pF)This advance technolog

October 2010UniFET-IITMFDP12N50NZ / FDPF12N50NZN-Channel MOSFET 500V, 11.5A, 0.52Features Description RDS(on) = 0.46 ( Typ. ) @ VGS = 10V, ID = 5.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 23nC )stripe, DMOS technology. Low Crss ( Typ. 14pF )This advanced tech

May 2012UniFETTMFDP12N50 / FDPF12N50TtmN-Channel MOSFET 500V, 11.5A, 0.65Features Description RDS(on) = 0.55 (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 22nC) stripe, DMOS technology. Low Crss ( Typ. 11pF)This advanced technology has be

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Isc N-Channel MOSFET Transistor FDPF12N50NZFEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-