WML080N10HG2 Todos los transistores

WML080N10HG2 100V N-Channel Enhancement Mode Power MOSFET Description WML080N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is GDS well suited for high efficiency fast switching performance. TO-220F Features V = 100V, I = 42A

WMM0 70C4, MO08N70C 08N70C4, WML08N7 WM C4 WMN0 70C4, MK08N70C 08N70C4, WMP08N7 WM C4 700V 0.65 S T V Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WM

WML08 WMK08N7 8N70EM, W 70EM, WMM08N70EM WMN08 WMP08N7 8N70EM, W 70EM, WMO08N70EM 700V Power M T V 0.8 Super Junction P MOSFET Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is at

WMM0 60C4, MO08N60C 08N60C4, WML08N6 WM C4 WMN0 60C4, MK08N60C 08N60C4, WMP08N6 WM C4 600V 0.65 S T V Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WM

WML08 WMK08N6 8N65EM, W 65EM, WMM08N65EM WMN08 WMP08N6 8N65EM, W 65EM, WMO08N65EM 650V 0.8 S unction Power M T V Super Ju MOSFET Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is a

WML08N80M3, W 80M3, WM M3 WMN08N8 MM08N80M WMO0 80M3, WM M3 08N80M3, WMP08N8 MK08N80M 800V 1.2 S unction Power M T V Super Ju MOSFET Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge pe

WMM0 65C4, MO08N65C 08N65C4, WML08N6 WM C4 WMN0 65C4, MK08N65C 08N65C4, WMP08N6 WM C4 650V 0.65 S unction Power M T Super Ju MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc