WML080N10HG2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WML080N10HG2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 28.4 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 42 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 25.4 nC
Tiempo de subida (tr): 10.3 nS
Conductancia de drenaje-sustrato (Cd): 385 pF
Resistencia entre drenaje y fuente RDS(on): 0.008 Ohm
Paquete / Cubierta: TO220F
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WML080N10HG2 Datasheet (PDF)
wml080n10hg2.pdf
WML080N10HG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWML080N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is GDSwell suited for high efficiency fast switching performance. TO-220FFeatures V = 100V, I = 42A
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