WML080N10HG2 - аналоги и даташиты транзистора

 

WML080N10HG2 - Даташиты. Аналоги. Основные параметры


   Наименование производителя: WML080N10HG2
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 28.4 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 42 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 10.3 ns
   Cossⓘ - Выходная емкость: 385 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
   Тип корпуса: TO220F
 

 Аналог (замена) для WML080N10HG2

   - подбор ⓘ MOSFET транзистора по параметрам

 

WML080N10HG2 Datasheet (PDF)

 ..1. Size:592K  way-on
 wml080n10hg2.pdf pdf_icon

WML080N10HG2

WML080N10HG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWML080N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is GDSwell suited for high efficiency fast switching performance. TO-220FFeatures V = 100V, I = 42A

 9.1. Size:670K  way-on
 wmm08n70c4 wml08n70c4 wmo08n70c4 wmn08n70c4 wmp08n70c4 wmk08n70c4.pdf pdf_icon

WML080N10HG2

WMM0 70C4, MO08N70C08N70C4, WML08N7 WM C4 WMN0 70C4, MK08N70C08N70C4, WMP08N7 WM C4 700V 0.65 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WM

 9.2. Size:668K  way-on
 wml08n70em wmk08n70em wmm08n70em wmn08n70em wmp08n70em wmo08n70em.pdf pdf_icon

WML080N10HG2

WML08 WMK08N78N70EM, W 70EM, WMM08N70EM WMN08 WMP08N78N70EM, W 70EM, WMO08N70EM 700V Power M T V 0.8 Super Junction P MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is at

 9.3. Size:667K  way-on
 wmm08n60c4 wml08n60c4 wmo08n60c4 wmn08n60c4 wmp08n60c4 wmk08n60c4.pdf pdf_icon

WML080N10HG2

WMM0 60C4, MO08N60C08N60C4, WML08N6 WM C4 WMN0 60C4, MK08N60C08N60C4, WMP08N6 WM C4 600V 0.65 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WM

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WMK07N100C2 , WML07N105C2 , WMN07N105C2 , WMM07N105C2 , WMJ07N105C2 , WMO07N105C2 , WMP07N105C2 , WMK07N105C2 , STF13NM60N , WML08N65EM , WMK08N65EM , WMM08N65EM , WMN08N65EM , WMP08N65EM , WMO08N65EM , WML08N70EM , WMK08N70EM .

History: MTP3415KN3 | SHD220455 | HM70N88 | SMIRF7N65T1TL | TPA65R940C | IXFV26N50PS | SI3434

 

 
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