WML080N10HG2 MOSFET Datasheet: N-Ch, 100V, 42A. Full specification with pinout and replacement list

WML080N10HG2 Specs and Replacement

Type Designator: WML080N10HG2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 42 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10.3 nS

Cossⓘ - Output Capacitance: 385 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO220F

WML080N10HG2 substitution

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WML080N10HG2 datasheet

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wml080n10hg2.pdf pdf_icon

WML080N10HG2 100V N-Channel Enhancement Mode Power MOSFET Description WML080N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is GDS well suited for high efficiency fast switching performance. TO-220F Features V = 100V, I = 42A ... See More ⇒

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