FDPF3860T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDPF3860T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 33.8 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0382 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de FDPF3860T MOSFET
- Selecciónⓘ de transistores por parámetros
FDPF3860T datasheet
..1. Size:641K fairchild semi
fdpf3860t.pdf 
March 2008 FDPF3860T tm N-Channel PowerTrench MOSFET 100V, 20A, 38.2m Description General Description RDS(on) = 38.2m ( MAX ) @ VGS = 10V, ID = 5.9A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been espe- Fast switching speed cially tailored to minimize the on-state resistance and yet maintain superior sw
..2. Size:584K onsemi
fdpf3860t.pdf
December 2013 FDPF3860T N-Channel PowerTrench MOSFET 100 V, 20 A, 38.2 m Features Description RDS(on) = 29.1 m (Typ.) @ VGS = 10 V, ID = 5.9 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Fast Switching Speed been tailored to minimize the on-state resistance while main- taining superior switching performance
..3. Size:275K inchange semiconductor
fdpf3860t.pdf
isc N-Channel MOSFET Transistor FDPF3860T FEATURES With TO-220F packaging Drain Source Voltage- V 100V DSS Static drain-source on-resistance RDS(on) 38.2m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =2
9.1. Size:623K fairchild semi
fdpf390n15a.pdf
July 2011 FDPF390N15A N-Channel PowerTrench MOSFET 150V, 15A, 40m Features Description RDS(on) = 31m ( Typ.)@ VGS = 10V, ID = 15A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has been Fast Switching Speed especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
9.2. Size:485K fairchild semi
fdp39n20 fdpf39n20.pdf
April 2007 TM UniFET FDP39N20 / FDPF39N20 200V N-Channel MOSFET Features Description 39A, 200V, RDS(on) = 0.066 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 38 nC) stripe, DMOS technology. Low Crss ( typical 57 pF) This advanced technology has been especially
9.3. Size:746K fairchild semi
fdpf3n50nz.pdf
October 2013 FDPF3N50NZ N-Channel UniFETTM II MOSFET 500 V, 3 A, 2.5 Features Description RDS(on) = 2.1 (Typ.) @ VGS = 10 V, ID = 1.5 A UniFETTM II MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 6.2 nC) technology. This advanced MOSFET family has the smallest Low Crss (Typ. 2.5 pF
9.4. Size:1205K fairchild semi
fdp33n25 fdpf33n25t.pdf
October TM UniFET FDP33N25 / FDPF33N25T 250V N-Channel MOSFET Features Description 33A, 250V, RDS(on) = 0.094 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 36.8 nC) transistors are produced using Fairchild s proprietary, planar Low Crss ( typical 39 pF) stripe, DMOS technology. Fast switching This advanced technolog
9.5. Size:220K fairchild semi
fdpf320n06l.pdf
December 2010 FDPF320N06L N-Channel PowerTrench MOSFET 60V, 21A, 25m Features Description RDS(on) = 20m ( Typ.)@ VGS = 10V, ID = 21A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has been RDS(on) = 23m ( Typ.)@ VGS = 5V, ID = 17A especially tailored to minimize the on-state resistance and yet maintain superior sw
9.6. Size:448K fairchild semi
fdpf33n25trdtu.pdf
August 2014 FDPF33N25T N-Channel UniFETTM MOSFET 250 V, 33 A, 94 m Features Description UniFETTM MOSFET is Fairchild Semiconductor s high voltage RDS(on) = 94 m (Max.) @ VGS = 10 V, ID = 16.5 A MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 36.8 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 39 pF) p
9.7. Size:644K fairchild semi
fdp39n20 fdpf39n20tldtu.pdf
August 2014 FDP39N20 / FDPF39N20 N-Channel UniFETTM MOSFET 200 V, 39 A, 66 m Features Description UniFETTM MOSFET is Fairchild Semiconductor s high voltage RDS(on) = 66 m (Max.) @ VGS = 10 V, ID = 19.5 A MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 38 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 5
9.8. Size:997K onsemi
fdpf390n15a.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.9. Size:623K onsemi
fdp39n20 fdpf39n20.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.10. Size:805K onsemi
fdpf3n50nz.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.11. Size:526K onsemi
fdpf33n25t.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.12. Size:700K onsemi
fdpf320n06l.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.14. Size:274K inchange semiconductor
fdpf390n15a.pdf
isc N-Channel MOSFET Transistor FDPF390N15A FEATURES With TO-220F packaging Drain Source Voltage- V 150V DSS Static drain-source on-resistance RDS(on) 40m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =2
Otros transistores... FDPF18N50T
, FDPF190N15A
, FDPF20N50
, FDPF20N50FT
, FDPF20N50T
, FDPF2710T
, FDPF320N06L
, FDPF33N25T
, IRFP460
, STF8236
, FDPF390N15A
, FDPF39N20
, STF8234
, FDPF3N50NZ
, FDPF44N25T
, FDPF51N25
, FDPF55N06
.
History: FDPF2710T
