FDPF3860T - описание и поиск аналогов

March 2008 FDPF3860T tm N-Channel PowerTrench MOSFET 100V, 20A, 38.2m Description General Description RDS(on) = 38.2m ( MAX ) @ VGS = 10V, ID = 5.9A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been espe- Fast switching speed cially tailored to minimize the on-state resistance and yet maintain superior sw

December 2013 FDPF3860T N-Channel PowerTrench MOSFET 100 V, 20 A, 38.2 m Features Description RDS(on) = 29.1 m (Typ.) @ VGS = 10 V, ID = 5.9 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Fast Switching Speed been tailored to minimize the on-state resistance while main- taining superior switching performance

isc N-Channel MOSFET Transistor FDPF3860T FEATURES With TO-220F packaging Drain Source Voltage- V 100V DSS Static drain-source on-resistance RDS(on) 38.2m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =2

July 2011 FDPF390N15A N-Channel PowerTrench MOSFET 150V, 15A, 40m Features Description RDS(on) = 31m ( Typ.)@ VGS = 10V, ID = 15A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has been Fast Switching Speed especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

April 2007 TM UniFET FDP39N20 / FDPF39N20 200V N-Channel MOSFET Features Description 39A, 200V, RDS(on) = 0.066 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 38 nC) stripe, DMOS technology. Low Crss ( typical 57 pF) This advanced technology has been especially

October 2013 FDPF3N50NZ N-Channel UniFETTM II MOSFET 500 V, 3 A, 2.5 Features Description RDS(on) = 2.1 (Typ.) @ VGS = 10 V, ID = 1.5 A UniFETTM II MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 6.2 nC) technology. This advanced MOSFET family has the smallest Low Crss (Typ. 2.5 pF

October TM UniFET FDP33N25 / FDPF33N25T 250V N-Channel MOSFET Features Description 33A, 250V, RDS(on) = 0.094 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 36.8 nC) transistors are produced using Fairchild s proprietary, planar Low Crss ( typical 39 pF) stripe, DMOS technology. Fast switching This advanced technolog

December 2010 FDPF320N06L N-Channel PowerTrench MOSFET 60V, 21A, 25m Features Description RDS(on) = 20m ( Typ.)@ VGS = 10V, ID = 21A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has been RDS(on) = 23m ( Typ.)@ VGS = 5V, ID = 17A especially tailored to minimize the on-state resistance and yet maintain superior sw

August 2014 FDPF33N25T N-Channel UniFETTM MOSFET 250 V, 33 A, 94 m Features Description UniFETTM MOSFET is Fairchild Semiconductor s high voltage RDS(on) = 94 m (Max.) @ VGS = 10 V, ID = 16.5 A MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 36.8 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 39 pF) p

August 2014 FDP39N20 / FDPF39N20 N-Channel UniFETTM MOSFET 200 V, 39 A, 66 m Features Description UniFETTM MOSFET is Fairchild Semiconductor s high voltage RDS(on) = 66 m (Max.) @ VGS = 10 V, ID = 19.5 A MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 38 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 5

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc N-Channel MOSFET Transistor FDPF390N15A FEATURES With TO-220F packaging Drain Source Voltage- V 150V DSS Static drain-source on-resistance RDS(on) 40m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =2