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FDPF3860T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDPF3860T
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 33.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 23 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0382 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для FDPF3860T

 

 

FDPF3860T Datasheet (PDF)

 ..1. Size:641K  fairchild semi
fdpf3860t.pdf

FDPF3860T
FDPF3860T

March 2008FDPF3860TtmN-Channel PowerTrench MOSFET 100V, 20A, 38.2mDescription General Description RDS(on) = 38.2m ( MAX ) @ VGS = 10V, ID = 5.9A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been espe- Fast switching speedcially tailored to minimize the on-state resistance and yet maintain superior sw

 ..2. Size:584K  onsemi
fdpf3860t.pdf

FDPF3860T
FDPF3860T

December 2013FDPF3860T N-Channel PowerTrench MOSFET100 V, 20 A, 38.2 mFeatures Description RDS(on) = 29.1 m (Typ.) @ VGS = 10 V, ID = 5.9 A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has Fast Switching Speed been tailored to minimize the on-state resistance while main-taining superior switching performance

 ..3. Size:275K  inchange semiconductor
fdpf3860t.pdf

FDPF3860T
FDPF3860T

isc N-Channel MOSFET Transistor FDPF3860TFEATURESWith TO-220F packagingDrain Source Voltage-: V 100VDSSStatic drain-source on-resistance:RDS(on) 38.2m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =2

 9.1. Size:623K  fairchild semi
fdpf390n15a.pdf

FDPF3860T
FDPF3860T

July 2011FDPF390N15A N-Channel PowerTrench MOSFET 150V, 15A, 40mFeatures Description RDS(on) = 31m ( Typ.)@ VGS = 10V, ID = 15A This N-Channel MOSFET is produced using Fairchild Semiconductors advance PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet maintain superior switching performance.

 9.2. Size:485K  fairchild semi
fdp39n20 fdpf39n20.pdf

FDPF3860T
FDPF3860T

April 2007TMUniFETFDP39N20 / FDPF39N20200V N-Channel MOSFETFeatures Description 39A, 200V, RDS(on) = 0.066 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 38 nC)stripe, DMOS technology. Low Crss ( typical 57 pF)This advanced technology has been especially

 9.3. Size:746K  fairchild semi
fdpf3n50nz.pdf

FDPF3860T
FDPF3860T

October 2013FDPF3N50NZN-Channel UniFETTM II MOSFET500 V, 3 A, 2.5 Features Description RDS(on) = 2.1 (Typ.) @ VGS = 10 V, ID = 1.5 A UniFETTM II MOSFET is Fairchild Semiconductors high voltage MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 6.2 nC)technology. This advanced MOSFET family has the smallest Low Crss (Typ. 2.5 pF

 9.4. Size:1205K  fairchild semi
fdp33n25 fdpf33n25t.pdf

FDPF3860T
FDPF3860T

October TMUniFETFDP33N25 / FDPF33N25T 250V N-Channel MOSFETFeatures Description 33A, 250V, RDS(on) = 0.094 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 36.8 nC) transistors are produced using Fairchilds proprietary, planar Low Crss ( typical 39 pF) stripe, DMOS technology. Fast switchingThis advanced technolog

 9.5. Size:220K  fairchild semi
fdpf320n06l.pdf

FDPF3860T
FDPF3860T

December 2010FDPF320N06LN-Channel PowerTrench MOSFET 60V, 21A, 25mFeatures Description RDS(on) = 20m ( Typ.)@ VGS = 10V, ID = 21A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has been RDS(on) = 23m ( Typ.)@ VGS = 5V, ID = 17Aespecially tailored to minimize the on-state resistance and yet maintain superior sw

 9.6. Size:448K  fairchild semi
fdpf33n25trdtu.pdf

FDPF3860T
FDPF3860T

August 2014FDPF33N25TN-Channel UniFETTM MOSFET250 V, 33 A, 94 mFeatures DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 94 m (Max.) @ VGS = 10 V, ID = 16.5 AMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 36.8 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 39 pF)p

 9.7. Size:644K  fairchild semi
fdp39n20 fdpf39n20tldtu.pdf

FDPF3860T
FDPF3860T

August 2014FDP39N20 / FDPF39N20N-Channel UniFETTM MOSFET200 V, 39 A, 66 mFeatures DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 66 m (Max.) @ VGS = 10 V, ID = 19.5 AMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 38 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 5

 9.8. Size:997K  onsemi
fdpf390n15a.pdf

FDPF3860T
FDPF3860T

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.9. Size:623K  onsemi
fdp39n20 fdpf39n20.pdf

FDPF3860T
FDPF3860T

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.10. Size:805K  onsemi
fdpf3n50nz.pdf

FDPF3860T
FDPF3860T

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.11. Size:526K  onsemi
fdpf33n25t.pdf

FDPF3860T
FDPF3860T

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.12. Size:700K  onsemi
fdpf320n06l.pdf

FDPF3860T
FDPF3860T

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.13. Size:274K  inchange semiconductor
fdpf39n20.pdf

FDPF3860T
FDPF3860T

isc N-Channel MOSFET Transistor FDPF39N20FEATURESWith TO-220F packagingDrain Source Voltage-: V 200VDSSStatic drain-source on-resistance:RDS(on) 66m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

 9.14. Size:274K  inchange semiconductor
fdpf390n15a.pdf

FDPF3860T
FDPF3860T

isc N-Channel MOSFET Transistor FDPF390N15AFEATURESWith TO-220F packagingDrain Source Voltage-: V 150VDSSStatic drain-source on-resistance:RDS(on) 40m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =2

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History: FDP6670AL

 

 
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