FDPF3860T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDPF3860T
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 33.8 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 23 nC
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0382 Ohm
Тип корпуса: TO220F
FDPF3860T Datasheet (PDF)
fdpf3860t.pdf
March 2008FDPF3860TtmN-Channel PowerTrench MOSFET 100V, 20A, 38.2mDescription General Description RDS(on) = 38.2m ( MAX ) @ VGS = 10V, ID = 5.9A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been espe- Fast switching speedcially tailored to minimize the on-state resistance and yet maintain superior sw
fdpf3860t.pdf
December 2013FDPF3860T N-Channel PowerTrench MOSFET100 V, 20 A, 38.2 mFeatures Description RDS(on) = 29.1 m (Typ.) @ VGS = 10 V, ID = 5.9 A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has Fast Switching Speed been tailored to minimize the on-state resistance while main-taining superior switching performance
fdpf3860t.pdf
isc N-Channel MOSFET Transistor FDPF3860TFEATURESWith TO-220F packagingDrain Source Voltage-: V 100VDSSStatic drain-source on-resistance:RDS(on) 38.2m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =2
fdpf390n15a.pdf
July 2011FDPF390N15A N-Channel PowerTrench MOSFET 150V, 15A, 40mFeatures Description RDS(on) = 31m ( Typ.)@ VGS = 10V, ID = 15A This N-Channel MOSFET is produced using Fairchild Semiconductors advance PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet maintain superior switching performance.
fdp39n20 fdpf39n20.pdf
April 2007TMUniFETFDP39N20 / FDPF39N20200V N-Channel MOSFETFeatures Description 39A, 200V, RDS(on) = 0.066 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 38 nC)stripe, DMOS technology. Low Crss ( typical 57 pF)This advanced technology has been especially
fdpf3n50nz.pdf
October 2013FDPF3N50NZN-Channel UniFETTM II MOSFET500 V, 3 A, 2.5 Features Description RDS(on) = 2.1 (Typ.) @ VGS = 10 V, ID = 1.5 A UniFETTM II MOSFET is Fairchild Semiconductors high voltage MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 6.2 nC)technology. This advanced MOSFET family has the smallest Low Crss (Typ. 2.5 pF
fdp33n25 fdpf33n25t.pdf
October TMUniFETFDP33N25 / FDPF33N25T 250V N-Channel MOSFETFeatures Description 33A, 250V, RDS(on) = 0.094 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 36.8 nC) transistors are produced using Fairchilds proprietary, planar Low Crss ( typical 39 pF) stripe, DMOS technology. Fast switchingThis advanced technolog
fdpf320n06l.pdf
December 2010FDPF320N06LN-Channel PowerTrench MOSFET 60V, 21A, 25mFeatures Description RDS(on) = 20m ( Typ.)@ VGS = 10V, ID = 21A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has been RDS(on) = 23m ( Typ.)@ VGS = 5V, ID = 17Aespecially tailored to minimize the on-state resistance and yet maintain superior sw
fdpf33n25trdtu.pdf
August 2014FDPF33N25TN-Channel UniFETTM MOSFET250 V, 33 A, 94 mFeatures DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 94 m (Max.) @ VGS = 10 V, ID = 16.5 AMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 36.8 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 39 pF)p
fdp39n20 fdpf39n20tldtu.pdf
August 2014FDP39N20 / FDPF39N20N-Channel UniFETTM MOSFET200 V, 39 A, 66 mFeatures DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 66 m (Max.) @ VGS = 10 V, ID = 19.5 AMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 38 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 5
fdpf390n15a.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdp39n20 fdpf39n20.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdpf3n50nz.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdpf33n25t.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdpf320n06l.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdpf39n20.pdf
isc N-Channel MOSFET Transistor FDPF39N20FEATURESWith TO-220F packagingDrain Source Voltage-: V 200VDSSStatic drain-source on-resistance:RDS(on) 66m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25
fdpf390n15a.pdf
isc N-Channel MOSFET Transistor FDPF390N15AFEATURESWith TO-220F packagingDrain Source Voltage-: V 150VDSSStatic drain-source on-resistance:RDS(on) 40m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =2
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: FDP6670AL
History: FDP6670AL
Список транзисторов
Обновления
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