FDPF3860T PDF and Equivalents Search

 

FDPF3860T Specs and Replacement

Type Designator: FDPF3860T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0382 Ohm

Package: TO220F

FDPF3860T substitution

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FDPF3860T datasheet

 ..1. Size:641K  fairchild semi
fdpf3860t.pdf pdf_icon

FDPF3860T

March 2008 FDPF3860T tm N-Channel PowerTrench MOSFET 100V, 20A, 38.2m Description General Description RDS(on) = 38.2m ( MAX ) @ VGS = 10V, ID = 5.9A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been espe- Fast switching speed cially tailored to minimize the on-state resistance and yet maintain superior sw... See More ⇒

 ..2. Size:584K  onsemi
fdpf3860t.pdf pdf_icon

FDPF3860T

December 2013 FDPF3860T N-Channel PowerTrench MOSFET 100 V, 20 A, 38.2 m Features Description RDS(on) = 29.1 m (Typ.) @ VGS = 10 V, ID = 5.9 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Fast Switching Speed been tailored to minimize the on-state resistance while main- taining superior switching performance... See More ⇒

 ..3. Size:275K  inchange semiconductor
fdpf3860t.pdf pdf_icon

FDPF3860T

isc N-Channel MOSFET Transistor FDPF3860T FEATURES With TO-220F packaging Drain Source Voltage- V 100V DSS Static drain-source on-resistance RDS(on) 38.2m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =2... See More ⇒

 9.1. Size:623K  fairchild semi
fdpf390n15a.pdf pdf_icon

FDPF3860T

July 2011 FDPF390N15A N-Channel PowerTrench MOSFET 150V, 15A, 40m Features Description RDS(on) = 31m ( Typ.)@ VGS = 10V, ID = 15A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has been Fast Switching Speed especially tailored to minimize the on-state resistance and yet maintain superior switching performance. ... See More ⇒

Detailed specifications: FDPF18N50T, FDPF190N15A, FDPF20N50, FDPF20N50FT, FDPF20N50T, FDPF2710T, FDPF320N06L, FDPF33N25T, IRFP460, STF8236, FDPF390N15A, FDPF39N20, STF8234, FDPF3N50NZ, FDPF44N25T, FDPF51N25, FDPF55N06

Keywords - FDPF3860T MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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