WMJ26N65SR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMJ26N65SR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 147 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 45 nS
Cossⓘ - Capacitancia de salida: 54 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.198 Ohm
Encapsulados: TO247
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WMJ26N65SR datasheet
wml26n65sr wmk26n65sr wmn26n65sr wmm26n65sr wmj26n65sr.pdf
WML26N6 MK26N65S 65SR, WM SR WMN2 MJ26N65S 26N65SR, WMM26N65SR, WM SR 650V 0.17 S unction Power M T Super Ju MOSFET Descrip ption WMOSTM SR is Wa new generation super ayon s w junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga charge performanc WMOSTM SR is
wml26n65c4 wmo26n65c4 wmk26n65c4 wmn26n65c4 wmm26n65c4 wmj26n65c4.pdf
WML26N65C4, WMO26N6 WM C4 W 65C4, MK26N65C WMN2 MJ26N65C 26N65C4, WMM26N65C4, WM C4 650V 0.16 S T V Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low ga charge performanc WMOSTM
wml26n65f2 wmo26n65f2 wmk26n65f2 wmn26n65f2 wmm26n65f2 wmj26n65f2.pdf
WML2 N65F2, WM F2 26N65F2, WMO26N MK26N65F WMN2 N65F2, WM F2 26N65F2, WMM26N MJ26N65F 650V 0.17 S T V Super Junction Power MOSFET Descrip ption WMOSTM F2 is Wa 2nd generation super ayon s junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f s S D D G G G S D G SJ-MOSFE while of an extremely fa
wml26n65c4 wmk26n65c4 wmn26n65c4 wmm26n65c4 wmo26n65c4 wmj26n65c4.pdf
WML26N65C4, WMO26N6 WM C4 W 65C4, MK26N65C WMN2 MJ26N65C 26N65C4, WMM26N65C4, WM C4 650V 0.16 S T V Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low ga charge performanc WMOSTM
Otros transistores... WMK26N65F2 , WMN26N65F2 , WMM26N65F2 , WMJ26N65F2 , WML26N65SR , WMK26N65SR , WMN26N65SR , WMM26N65SR , IRF740 , WML28N50C4 , WMK28N50C4 , WMN28N50C4 , B20N15D , DG4N60 , CS55N25A8R-G , CS55N25AKR , WMM28N50C4 .
History: BLM2301 | WSF12N10 | WSD4050DN | WSF3036A | SI2319 | IRFB4615 | BRD50N03
History: BLM2301 | WSF12N10 | WSD4050DN | WSF3036A | SI2319 | IRFB4615 | BRD50N03
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