WMJ26N65SR. Аналоги и основные параметры
Наименование производителя: WMJ26N65SR
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 147 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 45 ns
Cossⓘ - Выходная емкость: 54 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.198 Ohm
Тип корпуса: TO247
Аналог (замена) для WMJ26N65SR
- подборⓘ MOSFET транзистора по параметрам
WMJ26N65SR даташит
wml26n65sr wmk26n65sr wmn26n65sr wmm26n65sr wmj26n65sr.pdf
WML26N6 MK26N65S 65SR, WM SR WMN2 MJ26N65S 26N65SR, WMM26N65SR, WM SR 650V 0.17 S unction Power M T Super Ju MOSFET Descrip ption WMOSTM SR is Wa new generation super ayon s w junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga charge performanc WMOSTM SR is
wml26n65c4 wmo26n65c4 wmk26n65c4 wmn26n65c4 wmm26n65c4 wmj26n65c4.pdf
WML26N65C4, WMO26N6 WM C4 W 65C4, MK26N65C WMN2 MJ26N65C 26N65C4, WMM26N65C4, WM C4 650V 0.16 S T V Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low ga charge performanc WMOSTM
wml26n65f2 wmo26n65f2 wmk26n65f2 wmn26n65f2 wmm26n65f2 wmj26n65f2.pdf
WML2 N65F2, WM F2 26N65F2, WMO26N MK26N65F WMN2 N65F2, WM F2 26N65F2, WMM26N MJ26N65F 650V 0.17 S T V Super Junction Power MOSFET Descrip ption WMOSTM F2 is Wa 2nd generation super ayon s junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f s S D D G G G S D G SJ-MOSFE while of an extremely fa
wml26n65c4 wmk26n65c4 wmn26n65c4 wmm26n65c4 wmo26n65c4 wmj26n65c4.pdf
WML26N65C4, WMO26N6 WM C4 W 65C4, MK26N65C WMN2 MJ26N65C 26N65C4, WMM26N65C4, WM C4 650V 0.16 S T V Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low ga charge performanc WMOSTM
Другие MOSFET... WMK26N65F2 , WMN26N65F2 , WMM26N65F2 , WMJ26N65F2 , WML26N65SR , WMK26N65SR , WMN26N65SR , WMM26N65SR , IRF740 , WML28N50C4 , WMK28N50C4 , WMN28N50C4 , B20N15D , DG4N60 , CS55N25A8R-G , CS55N25AKR , WMM28N50C4 .
History: WML36N65C4 | SI2308DS-T1-GE3 | WPM1480 | WSF09N20 | SGM0410 | WSF20N06 | RU75N08R
History: WML36N65C4 | SI2308DS-T1-GE3 | WPM1480 | WSF09N20 | SGM0410 | WSF20N06 | RU75N08R
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Список транзисторов
Обновления
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