WMJ26N65SR MOSFET. Datasheet pdf. Equivalent
Type Designator: WMJ26N65SR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 147 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 34.7 nC
trⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 54 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.198 Ohm
Package: TO247
WMJ26N65SR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMJ26N65SR Datasheet (PDF)
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