WMLL010N04LG4 Todos los transistores

 

WMLL010N04LG4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMLL010N04LG4
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 333.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 378 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 1495 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0013 Ohm
   Paquete / Cubierta: TOLL
 

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WMLL010N04LG4 Datasheet (PDF)

 ..1. Size:608K  way-on
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WMLL010N04LG4

WMLL010N04LG4 40V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL010N04LG4 uses Wayon's 4th generation power trench SMOSFET technology that has been especially tailored to minimize the SGSSSSSSSSon-state resistance and yet maintain superior switching performance. SSGSSThis device is well suited for high efficiency fast switching applicati

 8.1. Size:635K  way-on
wmll013n08hgs.pdf pdf_icon

WMLL010N04LG4

WMLL013N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL013N08HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.

 8.2. Size:634K  way-on
wmll014n06hg4.pdf pdf_icon

WMLL010N04LG4

WMLL014N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL014N06HG4 uses Wayon's 4th generation power trench SMOSFET technology that has been especially tailored to minimize the SGSSSSSSSSon-state resistance and yet maintain superior switching performance. SSGSSThis device is well suited for high efficiency fast switching applicati

 8.3. Size:615K  way-on
wmll017n10hgs.pdf pdf_icon

WMLL010N04LG4

WMLL017N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL017N10HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.

Otros transistores... WMM90R360S , WMJ90R360S , WML90R500S , WMO90R500S , WMK90R500S , WMN90R500S , WMM90R500S , WMJ90R500S , IRF9540 , WMLL013N08HGS , WMLL014N06HG4 , WMLL017N10HGS , WMLL020N08HGS , WMLL020N10HG4 , WMLL020N10HGS , WMLL020NV8HGS , WMLL025N10HGS .

History: HYG042N10NS1P | WML10N60C4 | STH410N4F7-2AG | SWD4N65DA | SP8006 | WMM15N65C2 | WPM3012

 

 
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