WMLL010N04LG4
MOSFET. Datasheet pdf. Equivalent
Type Designator: WMLL010N04LG4
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 333.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4
V
|Id|ⓘ - Maximum Drain Current: 378
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 118
nC
trⓘ - Rise Time: 14
nS
Cossⓘ -
Output Capacitance: 1495
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0013
Ohm
Package:
TOLL
WMLL010N04LG4
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMLL010N04LG4
Datasheet (PDF)
..1. Size:608K way-on
wmll010n04lg4.pdf
WMLL010N04LG4 40V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL010N04LG4 uses Wayon's 4th generation power trench SMOSFET technology that has been especially tailored to minimize the SGSSSSSSSSon-state resistance and yet maintain superior switching performance. SSGSSThis device is well suited for high efficiency fast switching applicati
8.1. Size:635K way-on
wmll013n08hgs.pdf
WMLL013N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL013N08HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.
8.2. Size:634K way-on
wmll014n06hg4.pdf
WMLL014N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL014N06HG4 uses Wayon's 4th generation power trench SMOSFET technology that has been especially tailored to minimize the SGSSSSSSSSon-state resistance and yet maintain superior switching performance. SSGSSThis device is well suited for high efficiency fast switching applicati
8.3. Size:615K way-on
wmll017n10hgs.pdf
WMLL017N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL017N10HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.
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