All MOSFET. WMLL010N04LG4 Datasheet

 

WMLL010N04LG4 Datasheet and Replacement


   Type Designator: WMLL010N04LG4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 333.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 378 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 1495 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0013 Ohm
   Package: TOLL
 

 WMLL010N04LG4 substitution

   - MOSFET ⓘ Cross-Reference Search

 

WMLL010N04LG4 Datasheet (PDF)

 ..1. Size:608K  way-on
wmll010n04lg4.pdf pdf_icon

WMLL010N04LG4

WMLL010N04LG4 40V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL010N04LG4 uses Wayon's 4th generation power trench SMOSFET technology that has been especially tailored to minimize the SGSSSSSSSSon-state resistance and yet maintain superior switching performance. SSGSSThis device is well suited for high efficiency fast switching applicati

 8.1. Size:635K  way-on
wmll013n08hgs.pdf pdf_icon

WMLL010N04LG4

WMLL013N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL013N08HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.

 8.2. Size:634K  way-on
wmll014n06hg4.pdf pdf_icon

WMLL010N04LG4

WMLL014N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL014N06HG4 uses Wayon's 4th generation power trench SMOSFET technology that has been especially tailored to minimize the SGSSSSSSSSon-state resistance and yet maintain superior switching performance. SSGSSThis device is well suited for high efficiency fast switching applicati

 8.3. Size:615K  way-on
wmll017n10hgs.pdf pdf_icon

WMLL010N04LG4

WMLL017N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL017N10HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.

Datasheet: WMM90R360S , WMJ90R360S , WML90R500S , WMO90R500S , WMK90R500S , WMN90R500S , WMM90R500S , WMJ90R500S , IRF9540 , WMLL013N08HGS , WMLL014N06HG4 , WMLL017N10HGS , WMLL020N08HGS , WMLL020N10HG4 , WMLL020N10HGS , WMLL020NV8HGS , WMLL025N10HGS .

History: IRFP4137 | HITK0204MP | FCB20N60F085 | STB9NK60ZD | VN1210N1 | SFG100N10GF | IRFHM8342

Keywords - WMLL010N04LG4 MOSFET datasheet

 WMLL010N04LG4 cross reference
 WMLL010N04LG4 equivalent finder
 WMLL010N04LG4 lookup
 WMLL010N04LG4 substitution
 WMLL010N04LG4 replacement

 

 
Back to Top

 


 
.