WMLL010N04LG4 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: WMLL010N04LG4
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 333.3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 378 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 14 ns
Cossⓘ - Выходная емкость: 1495 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0013 Ohm
Тип корпуса: TOLL
- подбор MOSFET транзистора по параметрам
WMLL010N04LG4 Datasheet (PDF)
wmll010n04lg4.pdf

WMLL010N04LG4 40V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL010N04LG4 uses Wayon's 4th generation power trench SMOSFET technology that has been especially tailored to minimize the SGSSSSSSSSon-state resistance and yet maintain superior switching performance. SSGSSThis device is well suited for high efficiency fast switching applicati
wmll013n08hgs.pdf

WMLL013N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL013N08HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.
wmll014n06hg4.pdf

WMLL014N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL014N06HG4 uses Wayon's 4th generation power trench SMOSFET technology that has been especially tailored to minimize the SGSSSSSSSSon-state resistance and yet maintain superior switching performance. SSGSSThis device is well suited for high efficiency fast switching applicati
wmll017n10hgs.pdf

WMLL017N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL017N10HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: SI9435DY-T1 | SKI04024
History: SI9435DY-T1 | SKI04024



Список транзисторов
Обновления
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
Popular searches
2sc968 | 2sd217 | bdw93c equivalent | cs7n60f | d613 transistor | fdmc8884 mosfet | k3569 mosfet equivalent | 2sa1370