WMLL010N04LG4 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: WMLL010N04LG4
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 333.3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.4 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 378 A
Tj ⓘ - Максимальная температура канала: 175 °C
Qg ⓘ - Общий заряд затвора: 118 nC
tr ⓘ - Время нарастания: 14 ns
Cossⓘ - Выходная емкость: 1495 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0013 Ohm
Тип корпуса: TOLL
Аналог (замена) для WMLL010N04LG4
WMLL010N04LG4 Datasheet (PDF)
wmll010n04lg4.pdf

WMLL010N04LG4 40V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL010N04LG4 uses Wayon's 4th generation power trench SMOSFET technology that has been especially tailored to minimize the SGSSSSSSSSon-state resistance and yet maintain superior switching performance. SSGSSThis device is well suited for high efficiency fast switching applicati
wmll013n08hgs.pdf

WMLL013N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL013N08HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.
wmll014n06hg4.pdf

WMLL014N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL014N06HG4 uses Wayon's 4th generation power trench SMOSFET technology that has been especially tailored to minimize the SGSSSSSSSSon-state resistance and yet maintain superior switching performance. SSGSSThis device is well suited for high efficiency fast switching applicati
wmll017n10hgs.pdf

WMLL017N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL017N10HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.
Другие MOSFET... WMM90R360S , WMJ90R360S , WML90R500S , WMO90R500S , WMK90R500S , WMN90R500S , WMM90R500S , WMJ90R500S , IRF9540 , WMLL013N08HGS , WMLL014N06HG4 , WMLL017N10HGS , WMLL020N08HGS , WMLL020N10HG4 , WMLL020N10HGS , WMLL020NV8HGS , WMLL025N10HGS .
History: SD210DE | R6515KNJ | DG4N65-TO251
History: SD210DE | R6515KNJ | DG4N65-TO251



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