WMLL013N08HGS Todos los transistores

 

WMLL013N08HGS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMLL013N08HGS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 468.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 400 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 86.8 nS
   Cossⓘ - Capacitancia de salida: 2615 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00135 Ohm
   Paquete / Cubierta: TOLL
 

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WMLL013N08HGS Datasheet (PDF)

 ..1. Size:635K  way-on
 wmll013n08hgs.pdf pdf_icon

WMLL013N08HGS

WMLL013N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL013N08HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.

 8.1. Size:634K  way-on
 wmll014n06hg4.pdf pdf_icon

WMLL013N08HGS

WMLL014N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL014N06HG4 uses Wayon's 4th generation power trench SMOSFET technology that has been especially tailored to minimize the SGSSSSSSSSon-state resistance and yet maintain superior switching performance. SSGSSThis device is well suited for high efficiency fast switching applicati

 8.2. Size:608K  way-on
 wmll010n04lg4.pdf pdf_icon

WMLL013N08HGS

WMLL010N04LG4 40V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL010N04LG4 uses Wayon's 4th generation power trench SMOSFET technology that has been especially tailored to minimize the SGSSSSSSSSon-state resistance and yet maintain superior switching performance. SSGSSThis device is well suited for high efficiency fast switching applicati

 8.3. Size:615K  way-on
 wmll017n10hgs.pdf pdf_icon

WMLL013N08HGS

WMLL017N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL017N10HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.

MOSTRAR MÁS

Otros transistores... WMJ90R360S , WML90R500S , WMO90R500S , WMK90R500S , WMN90R500S , WMM90R500S , WMJ90R500S , WMLL010N04LG4 , IRFB4115 , WMLL014N06HG4 , WMLL017N10HGS , WMLL020N08HGS , WMLL020N10HG4 , WMLL020N10HGS , WMLL020NV8HGS , WMLL025N10HGS , WMLL030N12HGS .

History: WMM15N65F2 | FDA79N15 | NCE4005 | JFAM30N60E

 

 
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