WMLL013N08HGS Todos los transistores

 

WMLL013N08HGS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMLL013N08HGS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 468.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 400 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 86.8 nS

Cossⓘ - Capacitancia de salida: 2615 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00135 Ohm

Encapsulados: TOLL

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WMLL013N08HGS datasheet

 ..1. Size:635K  way-on
 wmll013n08hgs.pdf pdf_icon

WMLL013N08HGS

WMLL013N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description D D WMLL013N08HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications.

 8.1. Size:634K  way-on
 wmll014n06hg4.pdf pdf_icon

WMLL013N08HGS

WMLL014N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description D D WMLL014N06HG4 uses Wayon's 4th generation power trench S MOSFET technology that has been especially tailored to minimize the S G S S S S S S S S on-state resistance and yet maintain superior switching performance. S S G S S This device is well suited for high efficiency fast switching applicati

 8.2. Size:608K  way-on
 wmll010n04lg4.pdf pdf_icon

WMLL013N08HGS

WMLL010N04LG4 40V N-Channel Enhancement Mode Power MOSFET Description D D WMLL010N04LG4 uses Wayon's 4th generation power trench S MOSFET technology that has been especially tailored to minimize the S G S S S S S S S S on-state resistance and yet maintain superior switching performance. S S G S S This device is well suited for high efficiency fast switching applicati

 8.3. Size:615K  way-on
 wmll017n10hgs.pdf pdf_icon

WMLL013N08HGS

WMLL017N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description D D WMLL017N10HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications.

MOSTRAR MÁS

Otros transistores... WMJ90R360S , WML90R500S , WMO90R500S , WMK90R500S , WMN90R500S , WMM90R500S , WMJ90R500S , WMLL010N04LG4 , P55NF06 , WMLL014N06HG4 , WMLL017N10HGS , WMLL020N08HGS , WMLL020N10HG4 , WMLL020N10HGS , WMLL020NV8HGS , WMLL025N10HGS , WMLL030N12HGS .

History: CS730FA9RD | WMN30N80M3 | 2SK1313L

 

 

 

 

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