All MOSFET. WMLL013N08HGS Datasheet

 

WMLL013N08HGS MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMLL013N08HGS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 468.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 400 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 243.6 nC
   trⓘ - Rise Time: 86.8 nS
   Cossⓘ - Output Capacitance: 2615 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00135 Ohm
   Package: TOLL

 WMLL013N08HGS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMLL013N08HGS Datasheet (PDF)

 ..1. Size:635K  way-on
wmll013n08hgs.pdf

WMLL013N08HGS
WMLL013N08HGS

WMLL013N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL013N08HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.

 8.1. Size:634K  way-on
wmll014n06hg4.pdf

WMLL013N08HGS
WMLL013N08HGS

WMLL014N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL014N06HG4 uses Wayon's 4th generation power trench SMOSFET technology that has been especially tailored to minimize the SGSSSSSSSSon-state resistance and yet maintain superior switching performance. SSGSSThis device is well suited for high efficiency fast switching applicati

 8.2. Size:608K  way-on
wmll010n04lg4.pdf

WMLL013N08HGS
WMLL013N08HGS

WMLL010N04LG4 40V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL010N04LG4 uses Wayon's 4th generation power trench SMOSFET technology that has been especially tailored to minimize the SGSSSSSSSSon-state resistance and yet maintain superior switching performance. SSGSSThis device is well suited for high efficiency fast switching applicati

 8.3. Size:615K  way-on
wmll017n10hgs.pdf

WMLL013N08HGS
WMLL013N08HGS

WMLL017N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL017N10HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AOB4S60L

 

 
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