WMLL013N08HGS - описание и поиск аналогов

 

Аналоги WMLL013N08HGS. Основные параметры


   Наименование производителя: WMLL013N08HGS
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 468.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 400 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 86.8 ns
   Cossⓘ - Выходная емкость: 2615 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.00135 Ohm
   Тип корпуса: TOLL
 

 Аналог (замена) для WMLL013N08HGS

   - подбор ⓘ MOSFET транзистора по параметрам

 

WMLL013N08HGS даташит

 ..1. Size:635K  way-on
 wmll013n08hgs.pdf pdf_icon

WMLL013N08HGS

WMLL013N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description D D WMLL013N08HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications.

 8.1. Size:634K  way-on
 wmll014n06hg4.pdf pdf_icon

WMLL013N08HGS

WMLL014N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description D D WMLL014N06HG4 uses Wayon's 4th generation power trench S MOSFET technology that has been especially tailored to minimize the S G S S S S S S S S on-state resistance and yet maintain superior switching performance. S S G S S This device is well suited for high efficiency fast switching applicati

 8.2. Size:608K  way-on
 wmll010n04lg4.pdf pdf_icon

WMLL013N08HGS

WMLL010N04LG4 40V N-Channel Enhancement Mode Power MOSFET Description D D WMLL010N04LG4 uses Wayon's 4th generation power trench S MOSFET technology that has been especially tailored to minimize the S G S S S S S S S S on-state resistance and yet maintain superior switching performance. S S G S S This device is well suited for high efficiency fast switching applicati

 8.3. Size:615K  way-on
 wmll017n10hgs.pdf pdf_icon

WMLL013N08HGS

WMLL017N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description D D WMLL017N10HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications.

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WMJ90R360S , WML90R500S , WMO90R500S , WMK90R500S , WMN90R500S , WMM90R500S , WMJ90R500S , WMLL010N04LG4 , P55NF06 , WMLL014N06HG4 , WMLL017N10HGS , WMLL020N08HGS , WMLL020N10HG4 , WMLL020N10HGS , WMLL020NV8HGS , WMLL025N10HGS , WMLL030N12HGS .

 

 
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