WMLL025N10HGS Todos los transistores

 

WMLL025N10HGS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMLL025N10HGS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 347.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 260 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 78.5 nS
   Cossⓘ - Capacitancia de salida: 1505 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm
   Paquete / Cubierta: TOLL
 

 Búsqueda de reemplazo de WMLL025N10HGS MOSFET

   - Selección ⓘ de transistores por parámetros

 

WMLL025N10HGS Datasheet (PDF)

 ..1. Size:632K  way-on
 wmll025n10hgs.pdf pdf_icon

WMLL025N10HGS

WMLL025N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL025N10HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.

 8.1. Size:621K  way-on
 wmll020nv8hgs.pdf pdf_icon

WMLL025N10HGS

WMLL020NV8HGS 85V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL020NV8HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.

 8.2. Size:613K  way-on
 wmll020n10hgs.pdf pdf_icon

WMLL025N10HGS

WMLL020N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL020N10HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.

 8.3. Size:644K  way-on
 wmll020n10hg4.pdf pdf_icon

WMLL025N10HGS

WMLL020N10HG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL020N10HG4 uses Wayon's 4th generation power trench SMOSFET technology that has been especially tailored to minimize the SGSSSSSSSSon-state resistance and yet maintain superior switching performance. SSGSSThis device is well suited for high efficiency fast switching applicat

MOSTRAR MÁS

Otros transistores... WMLL010N04LG4 , WMLL013N08HGS , WMLL014N06HG4 , WMLL017N10HGS , WMLL020N08HGS , WMLL020N10HG4 , WMLL020N10HGS , WMLL020NV8HGS , IRFP260 , WMLL030N12HGS , WMLL040N15HG2 , WMLL065N15HG2 , WMLL099N20HG2 , WMM015N08HGS , WMM020N06HG4 , WMM020N10HGS , WMM023N08HGS .

History: WMK036N12HGS | RMW200N03 | DG4N65-TO251 | WMLL010N04LG4 | STU80N4F6 | SFG10R05FF | R6515KNJ

 

 
Back to Top

 


 
.