WMLL025N10HGS MOSFET. Datasheet pdf. Equivalent
Type Designator: WMLL025N10HGS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 347.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 260 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 150 nC
trⓘ - Rise Time: 78.5 nS
Cossⓘ - Output Capacitance: 1505 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
Package: TOLL
WMLL025N10HGS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMLL025N10HGS Datasheet (PDF)
wmll025n10hgs.pdf
WMLL025N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL025N10HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.
wmll020nv8hgs.pdf
WMLL020NV8HGS 85V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL020NV8HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.
wmll020n10hgs.pdf
WMLL020N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL020N10HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.
wmll020n10hg4.pdf
WMLL020N10HG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL020N10HG4 uses Wayon's 4th generation power trench SMOSFET technology that has been especially tailored to minimize the SGSSSSSSSSon-state resistance and yet maintain superior switching performance. SSGSSThis device is well suited for high efficiency fast switching applicat
wmll020n08hgs.pdf
WMLL020N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL020N08HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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