WMLL025N10HGS PDF and Equivalents Search

 

WMLL025N10HGS Specs and Replacement

Type Designator: WMLL025N10HGS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 347.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 260 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 78.5 nS

Cossⓘ - Output Capacitance: 1505 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm

Package: TOLL

WMLL025N10HGS substitution

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WMLL025N10HGS datasheet

 ..1. Size:632K  way-on
 wmll025n10hgs.pdf pdf_icon

WMLL025N10HGS

WMLL025N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description D D WMLL025N10HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications. ... See More ⇒

 8.1. Size:621K  way-on
 wmll020nv8hgs.pdf pdf_icon

WMLL025N10HGS

WMLL020NV8HGS 85V N-Channel Enhancement Mode Power MOSFET Description D D WMLL020NV8HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications. ... See More ⇒

 8.2. Size:613K  way-on
 wmll020n10hgs.pdf pdf_icon

WMLL025N10HGS

WMLL020N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description D D WMLL020N10HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications. ... See More ⇒

 8.3. Size:644K  way-on
 wmll020n10hg4.pdf pdf_icon

WMLL025N10HGS

WMLL020N10HG4 100V N-Channel Enhancement Mode Power MOSFET Description D D WMLL020N10HG4 uses Wayon's 4th generation power trench S MOSFET technology that has been especially tailored to minimize the S G S S S S S S S S on-state resistance and yet maintain superior switching performance. S S G S S This device is well suited for high efficiency fast switching applicat... See More ⇒

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Detailed specifications: WMLL010N04LG4, WMLL013N08HGS, WMLL014N06HG4, WMLL017N10HGS, WMLL020N08HGS, WMLL020N10HG4, WMLL020N10HGS, WMLL020NV8HGS, 2SK3878, WMLL030N12HGS, WMLL040N15HG2, WMLL065N15HG2, WMLL099N20HG2, WMM015N08HGS, WMM020N06HG4, WMM020N10HGS, WMM023N08HGS

Keywords - WMLL025N10HGS MOSFET specs

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