All MOSFET. WMLL025N10HGS Datasheet

 

WMLL025N10HGS Datasheet and Replacement


   Type Designator: WMLL025N10HGS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 347.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 260 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 78.5 nS
   Cossⓘ - Output Capacitance: 1505 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: TOLL
 

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WMLL025N10HGS Datasheet (PDF)

 ..1. Size:632K  way-on
 wmll025n10hgs.pdf pdf_icon

WMLL025N10HGS

WMLL025N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL025N10HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.

 8.1. Size:621K  way-on
 wmll020nv8hgs.pdf pdf_icon

WMLL025N10HGS

WMLL020NV8HGS 85V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL020NV8HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.

 8.2. Size:613K  way-on
 wmll020n10hgs.pdf pdf_icon

WMLL025N10HGS

WMLL020N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL020N10HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.

 8.3. Size:644K  way-on
 wmll020n10hg4.pdf pdf_icon

WMLL025N10HGS

WMLL020N10HG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL020N10HG4 uses Wayon's 4th generation power trench SMOSFET technology that has been especially tailored to minimize the SGSSSSSSSSon-state resistance and yet maintain superior switching performance. SSGSSThis device is well suited for high efficiency fast switching applicat

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Datasheet: WMLL010N04LG4 , WMLL013N08HGS , WMLL014N06HG4 , WMLL017N10HGS , WMLL020N08HGS , WMLL020N10HG4 , WMLL020N10HGS , WMLL020NV8HGS , IRFP260 , WMLL030N12HGS , WMLL040N15HG2 , WMLL065N15HG2 , WMLL099N20HG2 , WMM015N08HGS , WMM020N06HG4 , WMM020N10HGS , WMM023N08HGS .

History: JFAM20N65C

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