Справочник MOSFET. WMLL025N10HGS

 

WMLL025N10HGS Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMLL025N10HGS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 347.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 260 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 78.5 ns
   Cossⓘ - Выходная емкость: 1505 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0026 Ohm
   Тип корпуса: TOLL
     - подбор MOSFET транзистора по параметрам

 

WMLL025N10HGS Datasheet (PDF)

 ..1. Size:632K  way-on
 wmll025n10hgs.pdf pdf_icon

WMLL025N10HGS

WMLL025N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL025N10HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.

 8.1. Size:621K  way-on
 wmll020nv8hgs.pdf pdf_icon

WMLL025N10HGS

WMLL020NV8HGS 85V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL020NV8HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.

 8.2. Size:613K  way-on
 wmll020n10hgs.pdf pdf_icon

WMLL025N10HGS

WMLL020N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL020N10HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.

 8.3. Size:644K  way-on
 wmll020n10hg4.pdf pdf_icon

WMLL025N10HGS

WMLL020N10HG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL020N10HG4 uses Wayon's 4th generation power trench SMOSFET technology that has been especially tailored to minimize the SGSSSSSSSSon-state resistance and yet maintain superior switching performance. SSGSSThis device is well suited for high efficiency fast switching applicat

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History: SI9435DY-T1 | SKI04024

 

 
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