FDPF8N60ZUT Todos los transistores

 ..1. Size:534K  fairchild semi
 fdp8n60zu fdpf8n60zut.pdf

April 2009 UniFETTM FDP8N60ZU / FDPF8N60ZUT N-Channel MOSFET, FRFET 600V, 6.5A, 1.35 Features Description RDS(on) = 1.15m ( Typ.) @ VGS = 10V, ID = 3.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 20nC) stripe, DMOS technology. Low Crss ( Typ. 10pF) This advanced techno

 ..2. Size:698K  onsemi
 fdpf8n60zut.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:719K  fairchild semi
 fdp8n50nz fdpf8n50nzt.pdf

October 2009 UniFETTM FDP8N50NZ / FDPF8N50NZT N-Channel MOSFET 500V, 8A, 0.85 Features Description RDS(on) = 0.77 ( Typ.) @ VGS = 10V, ID = 4A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC) technology. Low Crss ( Typ. 5pF) This advance technology has been

 8.2. Size:245K  fairchild semi
 fdp8n50nz fdpf8n50nz fdpf8n50nzt.pdf

March 2010 UniFETTM FDP8N50NZ / FDPF8N50NZ tm N-Channel MOSFET 500V, 8A, 0.85 Features Description RDS(on) = 0.77 ( Typ.) @ VGS = 10V, ID = 4A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC) technology. Low Crss ( Typ. 5pF) This advance technology has been es

 8.3. Size:677K  fairchild semi
 fdp8n50nzu fdpf8n50nzu.pdf

February 2010 UniFET-IITM FDP8N50NZU / FDPF8N50NZU tm N-Channel MOSFET 500V, 6.5A, 1.2 Features Description RDS(on) = 1.0 ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC) technology. Low Crss ( Typ. 5pF) This advance t echnology

 8.4. Size:236K  fairchild semi
 fdp8n50nzf fdpf8n50nzf.pdf

February 2010 UniFET-IITM FDP8N50NZF / FDPF8N50NZF tm N-Channel MOSFET 500V, 7A, 1 Features Description RDS(on) = 0.85 ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC) technology. Low Crss ( Typ. 5pF) This advance technology has

 8.5. Size:894K  onsemi
 fdpf8n50nzf.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.6. Size:888K  onsemi
 fdp8n50nz fdpf8n50nz.pdf

October 2013 FDP8N50NZ / FDPF8N50NZ N-Channel UniFETTM II MOSFET 500 V, 8 A, 850 m Features Description RDS(on) = 770 m (Typ.) @ VGS = 10 V, ID = 4 A UniFETTM II MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 14 nC) technology. This advanced MOSFET family has the smallest Low Crss (