FDPF8N60ZUT Datasheet and Replacement

April 2009UniFETTMFDP8N60ZU / FDPF8N60ZUTN-Channel MOSFET, FRFET 600V, 6.5A, 1.35Features Description RDS(on) = 1.15m ( Typ.) @ VGS = 10V, ID = 3.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 20nC)stripe, DMOS technology. Low Crss ( Typ. 10pF)This advanced techno

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

October 2009UniFETTMFDP8N50NZ / FDPF8N50NZTN-Channel MOSFET 500V, 8A, 0.85Features Description RDS(on) = 0.77 ( Typ.) @ VGS = 10V, ID = 4A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC)technology. Low Crss ( Typ. 5pF)This advance technology has been

March 2010UniFETTMFDP8N50NZ / FDPF8N50NZtmN-Channel MOSFET500V, 8A, 0.85Features Description RDS(on) = 0.77 ( Typ.) @ VGS = 10V, ID = 4A This N-Channel enhancement mode power field effect transistorsare produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC)technology. Low Crss ( Typ. 5pF)This advance technology has been es

February 2010UniFET-IITMFDP8N50NZU / FDPF8N50NZUtmN-Channel MOSFET500V, 6.5A, 1.2Features Description RDS(on) = 1.0 ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistorsare produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC)technology. Low Crss ( Typ. 5pF)This advance t echnology

February 2010UniFET-IITMFDP8N50NZF / FDPF8N50NZFtmN-Channel MOSFET500V, 7A, 1Features Description RDS(on) = 0.85 ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistorsare produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC)technology. Low Crss ( Typ. 5pF)This advance technology has

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

October 2013FDP8N50NZ / FDPF8N50NZN-Channel UniFETTM II MOSFET500 V, 8 A, 850 mFeatures Description RDS(on) = 770 m (Typ.) @ VGS = 10 V, ID = 4 A UniFETTM II MOSFET is Fairchild Semiconductors high voltage MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 14 nC)technology. This advanced MOSFET family has the smallest Low Crss (