FDPF8N60ZUT - описание и поиск аналогов

April 2009 UniFETTM FDP8N60ZU / FDPF8N60ZUT N-Channel MOSFET, FRFET 600V, 6.5A, 1.35 Features Description RDS(on) = 1.15m ( Typ.) @ VGS = 10V, ID = 3.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 20nC) stripe, DMOS technology. Low Crss ( Typ. 10pF) This advanced techno

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

October 2009 UniFETTM FDP8N50NZ / FDPF8N50NZT N-Channel MOSFET 500V, 8A, 0.85 Features Description RDS(on) = 0.77 ( Typ.) @ VGS = 10V, ID = 4A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC) technology. Low Crss ( Typ. 5pF) This advance technology has been

March 2010 UniFETTM FDP8N50NZ / FDPF8N50NZ tm N-Channel MOSFET 500V, 8A, 0.85 Features Description RDS(on) = 0.77 ( Typ.) @ VGS = 10V, ID = 4A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC) technology. Low Crss ( Typ. 5pF) This advance technology has been es

February 2010 UniFET-IITM FDP8N50NZU / FDPF8N50NZU tm N-Channel MOSFET 500V, 6.5A, 1.2 Features Description RDS(on) = 1.0 ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC) technology. Low Crss ( Typ. 5pF) This advance t echnology

February 2010 UniFET-IITM FDP8N50NZF / FDPF8N50NZF tm N-Channel MOSFET 500V, 7A, 1 Features Description RDS(on) = 0.85 ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC) technology. Low Crss ( Typ. 5pF) This advance technology has

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

October 2013 FDP8N50NZ / FDPF8N50NZ N-Channel UniFETTM II MOSFET 500 V, 8 A, 850 m Features Description RDS(on) = 770 m (Typ.) @ VGS = 10 V, ID = 4 A UniFETTM II MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 14 nC) technology. This advanced MOSFET family has the smallest Low Crss (