WMO053NV8HGS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMO053NV8HGS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 138.9 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 85 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 118 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 720 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0058 Ohm
Encapsulados: TO252
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WMO053NV8HGS datasheet
wmo053nv8hgs.pdf
WMO053NV8HGS 85V N-Channel Enhancement Mode Power MOSFET Description WMO053NV8HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This S device is well suited for high efficiency fast switching applications. G TO-252 Features V = 85V, I = 118A DS
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Otros transistores... WMJ22N50C4, WMO22N50C4, WMK22N50C4, WML22N50C4, WMO030N06HG4, WMO030N06LG4, WMO048NV6HG4, WMO048NV6LG4, IRFP250, WMO060N10HGS, WMO080N10HG2, WMO090NV6HG4, WMO099N10HGS, WMO099N10LGS, WMO09N15TS, WMO09N20DM, WMO09N20DMH
History: AM4463P | WMO030N06HG4 | SPN05T10 | NVMFD030N06C | SM3116NSU | WMO175N10LG4 | AM2398NE
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