WMO053NV8HGS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: WMO053NV8HGS
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 138.9 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 118 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 72.6 nC
trⓘ - Время нарастания: 21 ns
Cossⓘ - Выходная емкость: 720 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0058 Ohm
Тип корпуса: TO252
Аналог (замена) для WMO053NV8HGS
WMO053NV8HGS Datasheet (PDF)
wmo053nv8hgs.pdf
WMO053NV8HGS 85V N-Channel Enhancement Mode Power MOSFET DescriptionWMO053NV8HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications.GTO-252Features V = 85V, I = 118A DS
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Список транзисторов
Обновления
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