Справочник MOSFET. WMO053NV8HGS

 

WMO053NV8HGS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WMO053NV8HGS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 138.9 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 118 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 72.6 nC
   trⓘ - Время нарастания: 21 ns
   Cossⓘ - Выходная емкость: 720 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0058 Ohm
   Тип корпуса: TO252

 Аналог (замена) для WMO053NV8HGS

 

 

WMO053NV8HGS Datasheet (PDF)

 ..1. Size:995K  way-on
wmo053nv8hgs.pdf

WMO053NV8HGS
WMO053NV8HGS

WMO053NV8HGS 85V N-Channel Enhancement Mode Power MOSFET DescriptionWMO053NV8HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications.GTO-252Features V = 85V, I = 118A DS

 9.1. Size:673K  way-on
wml05n80m3 wmn05n80m3 wmm05n80m3 wmo05n80m3 wmp05n80m3 wmk05n80m3.pdf

WMO053NV8HGS
WMO053NV8HGS

WML05N80M3, W 80M3, WM M3 WMN05N8 MM05N80MWMO0 80M3, WM M3 05N80M3, WMP05N8 MK05N80M 800 Junction ET0V 2.0 Super J n Power MOSFEDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perf

 9.2. Size:659K  way-on
wmk05n70mm wmo05n70mm wmn05n70mm wmm05n70mm wmp05n70mm.pdf

WMO053NV8HGS
WMO053NV8HGS

W 0MM, WMOWMK05N70 O05N70MM WMN05N WMM05N70N70MM, W 0MM, WMP05N70MM 700V 1.2 Z otected Power M TV Zener-pro MOSFETDescripptionWMOSTM MM is Wa new generatio super ayons w on junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM MM is ate charge

 9.3. Size:653K  way-on
wml05n100c2 wmk05n100c2 wmm05n100c2 wmn05n100c2 wmp05n100c2 wmo05n100c2.pdf

WMO053NV8HGS
WMO053NV8HGS

WML05N100C2, WMK05N100C2, WMM C2 M05N100CWMN05N WMP05N100C2, WMO C2 N100C2, W O05N100C 1000V 2.6 S T0 Super Junction Power MOSFETDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D S D G GG D G and low ga charge performanc WMOS

 9.4. Size:653K  way-on
wml05n105c2 wmk05n105c2 wmm05n105c2 wmn05n105c2 wmp05n105c2 wmo05n105c2.pdf

WMO053NV8HGS
WMO053NV8HGS

WML05N105C2, WMK05N105C2, WMM C2 M05N105CWMN05N WMP05N105C2, WMO C2 N105C2, W O05N105C 1050V 2.8 S T0 Super Junction Power MOSFETDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D S D G GG D G and low ga charge performanc WMOS

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