WMO053NV8HGS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: WMO053NV8HGS
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 138.9 W
Предельно допустимое напряжение сток-исток |Uds|: 85 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3.5 V
Максимально допустимый постоянный ток стока |Id|: 118 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 72.6 nC
Время нарастания (tr): 21 ns
Выходная емкость (Cd): 720 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0058 Ohm
Тип корпуса: TO252
Аналог (замена) для WMO053NV8HGS
WMO053NV8HGS Datasheet (PDF)
wmo053nv8hgs.pdf
WMO053NV8HGS 85V N-Channel Enhancement Mode Power MOSFET DescriptionWMO053NV8HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications.GTO-252Features V = 85V, I = 118A DS
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History: AP50WN750I
