WMO053NV8HGS MOSFET. Datasheet pdf. Equivalent
Type Designator: WMO053NV8HGS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 138.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 118 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 72.6 nC
trⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 720 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
Package: TO252
WMO053NV8HGS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMO053NV8HGS Datasheet (PDF)
wmo053nv8hgs.pdf
WMO053NV8HGS 85V N-Channel Enhancement Mode Power MOSFET DescriptionWMO053NV8HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications.GTO-252Features V = 85V, I = 118A DS
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